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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Initial delivery state  
N25Q128 - 1.8 V  
12  
Initial delivery state  
The device is delivered with the memory array erased: all bits are set to 1 (each byte  
contains FFh). The Status Register contains 00h (all Status Register bits are 0).  
13  
Maximum rating  
Stressing the device outside the ratings listed here may cause permanent damage to the  
device. These are stress ratings only, and operation of the device at these, or any other  
conditions outside those indicated in the operating sections of this specification, is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect  
device reliability.  
Table 28. Absolute maximum ratings  
Symbol  
Parameter  
Min  
Max  
Unit  
TSTG  
TLEAD  
VIO  
Storage temperature  
–65  
150  
see(1)  
VCC + 0.6  
4.0  
°C  
°C  
V
Lead temperature during soldering  
Input and output voltage (with respect to ground)  
Supply voltage  
–0.6  
–0.6  
–0.2  
VCC  
V
VPP  
VESD  
Fast program/erase voltage(2)  
10.0  
V
Electrostatic discharge voltage (human body model)(3) –2000  
2000  
V
1. Compliant with JEDEC Std. J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx  
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous  
Substances (RoHS) 2002/95/EU.  
2. Avoid applying VPPH to the W/VPP pin during Bulk Erase.  
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).  
170/185