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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Instructions  
N25Q128 - 1.8 V  
Figure 52. Program OTP instruction sequence DIO-SPI  
S
C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27  
Instruction  
24-Bit Address  
DataByte1  
DataByten  
DataByte2  
6
7
4
5
2
3
0
1
6
4
0
6
4
0
22 20 18 16  
23 21 19 17  
6
4
0
14 12 10  
8
2
2
2
DQ0  
DQ1  
7
5
1
7
5
1
7
5
1
3
15 13 11  
9
3
3
Dual_Program_OTP  
9.2.8  
Subsector Erase (SSE)  
For devices with bottom or top architecture, at the bottom (or top) of the addressable area  
there are 8 boot sectors, each one having 16 4Kbytes subsectors. The Subsector Erase  
(SSE) instruction sets to '1' (FFh) all bits inside the chosen subsector. Before it can be  
accepted, a Write Enable (WREN) instruction must previously have been executed.  
Apart form the parallelizing of the instruction code and the address on the two pins DQ0 and  
DQ1, the instruction functionality is exactly the same as the Subsector Erase (SSE)  
instruction of the Extended SPI protocol, please refer to Section 9.1.17: Subsector Erase  
(SSE) for further details.  
Figure 53. Subsector Erase instruction sequence DIO-SPI  
S
C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15  
Instruction  
24-Bit Address  
14 12 10 8  
6
7
4
5
2
3
0
1
22 20 18 16  
23 21 19 17  
DQ0  
DQ1  
15 13 11 9  
Dual_Subsector_Erase  
120/185  
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