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MT48LC64M4A2FB1 参数 Datasheet PDF下载

MT48LC64M4A2FB1图片预览
型号: MT48LC64M4A2FB1
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM [SDR SDRAM]
分类和应用: 动态存储器
文件页数/大小: 86 页 / 3693 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: x4, x8, x16 SDRAM  
Electrical Specifications – IDD Parameters  
Electrical Specifications – IDD Parameters  
Table 10: IDD Specifications and Conditions (x4, x8, x16) Revision D  
Notes 1–5 apply to all parameters and conditions; VDD/VDDQ = +3.3V ±0.3V  
Max  
-7E  
Parameter/Condition  
Symbol  
-6A  
-75  
Unit Notes  
Operating current: Active mode; Burst = 2; READ or WRITE; tRC  
= tRC (MIN)  
IDD1  
135  
135  
125  
mA 6, 7, 8,  
9
Standby current: Power-down mode; All banks idle; CKE =  
LOW  
IDD2  
IDD3  
IDD4  
2
2
2
mA  
9
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All  
banks active after tRCD met; No accesses in progress  
40  
40  
40  
mA 6, 8, 9,  
10  
Operating current: Burst mode; Page burst; READ or WRITE;  
All banks active  
135  
135  
135  
mA 6, 7, 8,  
9
Auto refresh current: CKE = HIGH; CS# = tRFC = tRFC (MIN)  
IDD5  
IDD6  
IDD6  
IDD7  
IDD7  
285  
3.5  
8
285  
3.5  
8
270  
3.5  
8
mA 6, 7, 8,  
HIGH  
9, 10,  
11  
tRFC = 7.813μs  
mA  
tRFC = 1.953μs (AT)  
mA  
Self refresh current: CKE 0.2V  
Standard  
2.5  
2.5  
1.5  
2.5  
1.5  
mA  
Low power (L)  
mA  
12  
Table 11: IDD Specifications and Conditions (x4, x8, x16) Revision G  
Notes 1–5 apply to all parameters and conditions; VDD/VDDQ = +3.3V ±0.3V  
Max  
Parameter/Condition  
Symbol  
-6A  
-7E  
Unit  
Notes  
Operating current: Active mode; Burst = 2; READ or WRITE; tRC = tRC  
(MIN)  
IDD1  
100  
100  
mA  
6, 7, 8,  
9
Standby current: Power-down mode; All banks idle; CKE = LOW  
IDD2  
IDD3  
2.5  
35  
2.5  
35  
mA  
mA  
9
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-  
tive after tRCD met; No accesses in progress  
6, 8, 9,  
10  
Operating current: Burst mode; Page burst; READ or WRITE; All  
banks active  
IDD4  
100  
100  
mA  
6, 7, 8,  
9
t
Auto refresh current: CKE = HIGH; CS# = HIGH RFC = tRFC (MIN)  
IDD5  
IDD6  
IDD6  
IDD7  
IDD7  
150  
4
150  
4
mA  
mA  
mA  
mA  
mA  
6, 7, 8,  
9, 10,  
11  
tRFC = 7.813μs  
tRFC = 1.953μs (AT)  
8
8
Self refresh current: CKE 0.2V  
Standard  
3
3
Low power (L)  
1.5  
1.5  
12  
1. All voltages referenced to VSS.  
Notes:  
2. The minimum specifications are used only to indicate cycle time at which proper opera-  
tion over the full temperature range is ensured; (0°C TA +70°C (commercial), –40°C ≤  
TA +85°C (industrial), and –40°C TA +105°C (automotive)).  
3. An initial pause of 100μs is required after power-up, followed by two AUTO REFRESH  
commands, before proper device operation is ensured. (VDD and VDDQ must be powered  
up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH  
PDF: 09005aef8091e6d1  
256Mb_sdr.pdf - Rev. R 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
25  
© 1999 Micron Technology, Inc. All rights reserved.  
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