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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x4, x8, x16 SDRAM  
Truth Tables  
Read with auto precharge enabled: Starts with registration of a READ command  
with auto precharge enabled and ends when tRP has been met. After tRP is met, the  
bank will be in the idle state.  
Write with auto precharge enabled: Starts with registration of a WRITE command  
with auto precharge enabled and ends when tRP has been met. After tRP is met, the  
bank will be in the idle state.  
4. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands can only be is-  
sued when all banks are idle.  
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank  
represented by the current state only.  
6. All states and sequences not shown are illegal or reserved.  
7. READs or WRITEs to bank m listed in the Command/Action column include READs or  
WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disa-  
bled.  
8. Concurrent auto precharge: Bank n will initiate the auto precharge command when its  
burst has been interrupted by bank m burst.  
9. The burst in bank n continues as initiated.  
10. For a READ without auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the READ on bank n, CAS latency (CL) later.  
11. For a READ without auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM  
should be used one clock prior to the WRITE command to prevent bus contention.  
12. For a WRITE without auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the WRITE on bank n when registered, with  
the data-out appearing CL later. The last valid WRITE to bank n will be data-in regis-  
tered one clock prior to the READ to bank m.  
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The  
last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank  
m.  
14. For a READ with auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the READ on bank n, CL later. The PRE-  
CHARGE to bank n will begin when the READ to bank m is registered.  
15. For a READ with auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM  
should be used two clocks prior to the WRITE command to prevent bus contention. The  
PRECHARGE to bank n will begin when the WRITE to bank m is registered.  
16. For a WRITE with auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the WRITE on bank n when registered, with  
the data-out appearing CL later. The PRECHARGE to bank n will begin after tWR is met,  
where tWR begins when the READ to bank m is registered. The last valid WRITE bank n  
will be data-in registered one clock prior to the READ to bank m.  
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The  
PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE  
to bank m is registered. The last valid WRITE to bank n will be data registered one clock  
to the WRITE to bank m.  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 1999 Micron Technology, Inc. All rights reserved.  
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