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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第32页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第33页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第34页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第35页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第37页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第38页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第39页浏览型号MT48LC4M16A2P-75G的Datasheet PDF文件第40页  
64Mb: x4, x8, x16 SDRAM  
Truth Tables  
Table 16: Truth Table – Current State Bank n, Command to Bank m  
Notes 1–6 apply to all parameters and conditions  
Current State  
CS# RAS# CAS# WE# Command/Action  
Notes  
Any  
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
X
L
X
H
X
H
L
X
H
X
H
H
L
COMMAND INHIBIT (NOP/continue previous operation)  
NO OPERATION (NOP/continue previous operation)  
Any command otherwise supported for bank m  
ACTIVE (select and activate row)  
READ (select column and start READ burst)  
WRITE (select column and start WRITE burst)  
PRECHARGE  
Idle  
Row activating, active, or  
precharging  
H
H
L
7
7
L
H
H
L
L
Read  
L
H
H
L
ACTIVE (select and activate row)  
READ (select column and start new READ burst)  
WRITE (select column and start WRITE burst)  
PRECHARGE  
(auto precharge disabled)  
H
H
L
7, 10  
7, 11  
9
L
H
H
L
L
Write  
L
H
H
L
ACTIVE (select and activate row)  
READ (select column and start READ burst)  
WRITE (select column and start new WRITE burst)  
PRECHARGE  
(auto precharge disabled)  
H
H
L
7, 12  
7, 13  
9
L
H
H
L
L
Read  
L
H
H
L
ACTIVE (select and activate row)  
READ (select column and start new READ burst)  
WRITE (select column and start WRITE burst)  
PRECHARGE  
(with auto precharge)  
H
H
L
7, 8, 14  
7, 8, 15  
9
L
H
H
L
L
Write  
(with auto precharge)  
L
H
H
L
ACTIVE (select and activate row)  
READ (select column and start READ burst)  
WRITE (select column and start new WRITE burst)  
PRECHARGE  
H
H
L
7, 8, 16  
7, 8, 17  
9
L
H
L
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (Table 17 (page 38)), and  
after tXSR has been met (if the previous state was self refresh).  
Notes:  
2. This table describes alternate bank operation, except where noted; for example, the cur-  
rent state is for bank n and the commands shown can be issued to bank m, assuming  
that bank m is in such a state that the given command is supported. Exceptions are cov-  
ered below.  
3. Current state definitions:  
Idle: The bank has been precharged, and tRP has been met.  
Row active: A row in the bank has been activated, and tRCD has been met. No data  
bursts/accesses and no register accesses are in progress.  
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet  
terminated or been terminated.  
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet  
terminated or been terminated.  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
36  
© 1999 Micron Technology, Inc. All rights reserved.  
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