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MT48LC2M32B2TG 参数 Datasheet PDF下载

MT48LC2M32B2TG图片预览
型号: MT48LC2M32B2TG
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 1810 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x32  
SDRAM  
PINDESCRIPTIONS  
PIN NUMBERS  
SYMBOL  
TYPE  
DESCRIPTION  
68  
CLK  
Input Clock: CLK is driven by the system clock. All SDRAM input signals are  
sampled on the positive edge of CLK. CLK also increments the internal burst  
counterandcontrolstheoutputregisters.  
67  
CKE  
Input ClockEnable:CKEactivates(HIGH)anddeactivates(LOW)theCLKsignal.  
DeactivatingtheclockprovidesPRECHARGEPOWER-DOWNandSELFREFRESH  
operation(allbanksidle),ACTIVEPOWER-DOWN(rowactiveinanybank)or  
CLOCKSUSPENDoperation(burst/accessinprogress).CKEissynchronous  
exceptafterthedeviceenterspower-downandselfrefreshmodes,where  
CKEbecomesasynchronousuntilafterexitingthesamemode.Theinput  
buffers,includingCLK,aredisabledduringpower-downandselfrefresh  
modes,providinglowstandbypower.CKEmaybetiedHIGH.  
20  
CS#  
Input ChipSelect:CS#enables(registeredLOW)anddisables(registeredHIGH)the  
commanddecoder.AllcommandsaremaskedwhenCS#isregisteredHIGH.  
CS#providesforexternalbankselectiononsystemswithmultiplebanks.  
CS#isconsideredpartofthecommandcode.  
17, 18, 19  
WE#,CAS#, Input CommandInputs:WE#,CAS#,andRAS#(alongwithCS#)definethe  
RAS#  
commandbeingentered.  
16, 71, 28, 59  
DQM0-  
DQM3  
Input Input/OutputMask:DQMissampledHIGHandisaninputmasksignal  
for write accesses and an output enable signal for read accesses. Input data  
ismaskedduringaWRITEcycle. TheoutputbuffersareplacedinaHigh-Z  
state(two-clocklatency)duringaREADcycle.DQM0correspondstoDQ0-  
DQ7;DQM1correspondstoDQ8-DQ15;DQM2correspondstoDQ16-DQ23;  
andDQM3correspondstoDQ24-DQ31.DQM0-DQM3areconsideredsame  
statewhenreferencedasDQM.  
22, 23  
BA0,BA1  
A0-A10  
Input BankAddressInput(s):BA0andBA1definetowhichbanktheACTIVE,READ,  
WRITEorPRECHARGEcommandisbeingapplied.  
25-27, 60-66, 24  
Input AddressInputs:A0-A10aresampledduringtheACTIVEcommand(row-  
addressA0-A10)andREAD/WRITEcommand(column-addressA0-A7withA10  
definingautoprecharge)toselectonelocationoutofthememoryarrayin  
therespectivebank.A10issampledduringaPRECHARGEcommandto  
determineifallbanksaretobeprecharged(A10HIGH)orbankselectedby  
BA0,BA1(LOW).Theaddressinputsalsoprovidetheop-codeduringaLOAD  
MODEREGISTERcommand.  
2, 4, 5, 7, 8, 10, 11, 13,  
74, 76, 77, 79, 80, 82, 83,  
85, 31, 33, 34, 36, 37, 39,  
40, 42, 45, 47, 48, 50, 51,  
53, 54, 56  
DQ0-DQ31 Input/ Data I/Os: Data bus.  
Output  
14, 21, 30, 57, 69, 70, 73  
NC  
NoConnect:Thesepinsshouldbeleftunconnected.Pin70isreserved  
forSSTLreferencevoltagesupply.  
3, 9, 35, 41, 49, 55, 75, 81  
6, 12, 32, 38, 46, 52, 78, 84  
1, 15, 29, 43  
V
DD  
Q
Supply DQ PowerSupply: Isolatedonthedieforimprovednoiseimmunity.  
Supply DQ Ground:ProvideisolatedgroundtoDQsforimprovednoiseimmunity.  
Supply PowerSupply:+3.3V 0.3V. (Seenote27onpage35.)  
Supply Ground.  
V
SS  
Q
V
DD  
44, 58, 72, 86  
V
SS  
64Mb: x32 SDRAM  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02  
5
©2002,MicronTechnology,Inc.  
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