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MT48LC2M32B2TG 参数 Datasheet PDF下载

MT48LC2M32B2TG图片预览
型号: MT48LC2M32B2TG
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 1810 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x32  
SDRAM  
Burst Type  
Accesses within a given burst may be programmed  
to be either sequential or interleaved; this is referred to  
as the burst type and is selected via bit M3.  
The ordering of accesses within a burst is deter-  
mined by the burst length, the burst type and the start-  
ing column address, as shown in Table 1.  
Table 1  
Burst Definition  
Burst  
Length  
Starting Column  
Address  
Order of Accesses Within a Burst  
Type = Sequential Type = Interleaved  
A0  
0
1
0-1  
1-0  
0-1  
1-0  
2
4
A1 A0  
Figure 1  
Mode Register Definition  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
A8  
A6 A5 A4  
A1  
Address Bus  
A10  
A7  
A3 A2  
A0  
A9  
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
Cn, Cn + 1, Cn + 2  
Cn + 3, Cn + 4...  
…Cn-1,  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
9
8
6
5
4
1
10  
7
3
2
0
Mode Register (Mx)  
Reserved* WB Op Mode CAS Latency  
BT  
Burst length  
1. *Should program  
8
A10, BA0, and BA1= “0”  
to ensure compatibility  
with future device  
Burst Length  
M2 M1 M0  
M3 = 0  
M3 = 1  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
4
8
1
2
4
Full  
Page  
(256)  
n = A0-A7  
8
Not Supported  
Reserved  
Reserved  
Reserved  
Full Page  
Reserved  
Reserved  
Reserved  
Reserved  
(Location0-256)  
Cn…  
NOTE: 1. For a burst length of two, A1-A7 select the block-  
of-two burst; A0 selects the starting column  
within the block.  
Burst Type  
M3  
0
2. For a burst length of four, A2-A7 select the block-  
of-four burst; A0-A1 select the starting column  
within the block.  
Sequential  
Interleave  
1
CAS Latency  
M6 M5 M4  
3. For a burst length of eight, A3-A7 select the block-  
of-eight burst; A0-A2 select the starting column  
within the block.  
4. For a full-page burst, the full row is selected and  
A0-A7 select the starting column.  
5. Whenever a boundary of the block is reached  
within a given sequence above, the following  
access wraps within the block.  
6. For a burst length of one, A0-A7 select the unique  
column to be accessed, and mode register bit M3  
is ignored.  
Reserved  
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
2
3
Reserved  
Reserved  
Reserved  
Reserved  
M8  
0
M7  
0
M6 - M0  
Defined  
-
Operating Mode  
Standard operation  
All other states reserved  
-
-
Write Burst Mode  
M9  
0
1
Programmed Burst Length  
Single Location Access  
64Mb: x32 SDRAM  
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
©2002,MicronTechnology,Inc.  
7
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