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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Output Characteristics and Operating Conditions  
Output Characteristics and Operating Conditions  
The DRAM uses both single-ended and differential output drivers. The single-ended  
output driver is summarized below, while the differential output driver is summarized  
in Table 48 (page 0±).  
Table 47: Single-Ended Output Driver Characteristics  
All voltages are referenced to VSS  
Parameter/Condition  
Symbol  
Min  
Max  
Unit  
Notes  
Output leakage current: DQ are disabled;  
IOZ  
–5  
5
μA  
1
0V VOUT VDDQ; ODT is disabled; ODT is HIGH  
Output slew rate: Single-ended; For rising and falling edges,  
SRQse  
2.5  
6
V/ns 1, 2, 3, 4  
measure between VOL(AC) = VREF - 0.1 × VDDQ and VOH(AC)  
REF + 0.1 × VDDQ  
=
V
Single-ended DC high-level output voltage  
Single-ended DC mid-point level output voltage  
Single-ended DC low-level output voltage  
Single-ended AC high-level output voltage  
Single-ended AC low-level output voltage  
Delta RON between pull-up and pull-down for DQ/DQS  
Test load for AC timing and output slew rates  
VOH(DC)  
VOM(DC)  
VOL(DC)  
VOH(AC)  
VOL(AC)  
MMPUPD  
0.8 × VDDQ  
V
V
1, 2, 5  
1, 2, 5  
1, 2, 5  
1, 2, 3, 6  
1, 2, 3, 6  
1, 7  
0.5 × VDDQ  
0.2 × VDDQ  
V
VTT + 0.1 × VDDQ  
VTT - 0.1 × VDDQ  
V
V
–10  
10  
%
Output to VTT (VDDQ/2) via 25Ω resistor  
3
1. RZQ of 240Ω 1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-  
Notes:  
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD  
VSSQ = VSS).  
;
2. VTT = VDDQ/2.  
3. See Figure 31 (page 71) for the test load configuration.  
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from  
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are  
either all static or all switching in the opposite direction. For all other DQ signal switch-  
ing combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.  
5. See Table 37 (page 64) for IV curve linearity. Do not use AC test load.  
6. See Table 49 (page 72) for output slew rate.  
7. See Table 37 (page 64) for additional information.  
8. See Figure 29 (page 70) for an example of a single-ended output signal.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
69  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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