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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT41J256M4的Datasheet PDF文件第63页浏览型号MT41J256M4的Datasheet PDF文件第64页浏览型号MT41J256M4的Datasheet PDF文件第65页浏览型号MT41J256M4的Datasheet PDF文件第66页浏览型号MT41J256M4的Datasheet PDF文件第68页浏览型号MT41J256M4的Datasheet PDF文件第69页浏览型号MT41J256M4的Datasheet PDF文件第70页浏览型号MT41J256M4的Datasheet PDF文件第71页  
1Gb: x4, x8, x16 DDR3 SDRAM  
Output Driver Impedance  
Alternative 40 Ohm Driver  
Table 44: 40 Ohm Driver Impedance Characteristics  
MR1[5,1]  
RON  
Resistor  
VOUT  
Min  
0.6  
Nom  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
n/a  
Max  
1.1  
1.1  
1.4  
1.4  
1.1  
1.1  
10  
Unit  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
%
0,0  
ꢆꢄΩ  
RON40(PD)  
0.2 × VDDQ  
0.5 × VDDQ  
0.8 × VDDQ  
0.2 × VDDQ  
0.5 × VDDQ  
0.8 × VDDQ  
0.5 × VDDQ  
0.9  
0.9  
RON40(PU)  
0.9  
0.9  
0.6  
Pull-up/pull-down mismatch (MMPUPD  
)
–10%  
1. Tolerance limits assume RZQ of 240Ω 1% and are applicable after proper ZQ calibra-  
tion has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS).  
Refer to 40 Ohm Output Driver Sensitivity (page 67) if either the temperature or the  
voltage changes after calibration.  
Notes:  
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-  
ure both RON(PU) and RON(PD) at 0.5 × VDDQ  
:
RON(PU) - RON(PD)  
MMPUPD  
=
× 100  
RON,nom  
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-  
vice operates between –40°C and 0°C (TC).  
40 Ohm Output Driver Sensitivity  
If either the temperature or the voltage changes after I/O calibration, then the tolerance  
limits listed in Table 44 can be expected to widen according to Table 45 and Table 46  
(page 68).  
Table 45: 40 Ohm Output Driver Sensitivity Definition  
Symbol  
Min  
Max  
Unit  
RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV|  
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV|  
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV|  
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV|  
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV|  
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV|  
1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV|  
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|  
1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV|  
1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV|  
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|  
1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV|  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
RZQ/6  
1. ΔT = T - T(@CALIBRATION)ꢎꢋΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ  
.
Note:  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
67  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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