Figure 88: Nonconsecutive WRITE to WRITE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
CK#
CK
Command
WRITE
Valid
NOP
NOP
NOP
NOP
WRITE
Valid
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address
WL = CWL + AL = 7
WL = CWL + AL = 7
DQS, DQS#
DI
n
DI
DI
DI
DI
DI
DI
DI
DI
b
DI
DI
DI
DI
DI
DI
DI
DQ
n + 1
n + 2
n + 3 n + 4
n + 5
n + 6
n + 7
b + 1
b + 2
b + 3
b + 4 b + 5
b + 6
b + 7
DM
Transitioning Data
Don't Care
1. DI n (or b) = data-in for column n (or column b).
Notes:
2. Seven subsequent elements of data-in are applied in the programmed order following DO n.
3. Each WRITE command may be to any bank.
4. Shown for WL = 7 (CWL = 7, AL = 0).
Figure 89: WRITE (BL8) to READ (BL8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
Ta0
CK#
CK
Command1
Address3
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
READ
t
2
WTR
Valid
Valid
t
t
WPRE
WPST
DQS, DQS#
DQ4
DI
n
DI
DI
DI
DI
DI
DI
DI
n + 7
n + 1
n + 2
n + 3
n + 4
n + 5
n + 6
WL = 5
Indicates break
in time scale
Transitioning Data
Don’t Care
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T9.
Notes:
3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command
at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0.
4. DI n = data-in for column n.
5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
MICRON [ MICRON TECHNOLOGY ]
