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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT41J256M4的Datasheet PDF文件第168页浏览型号MT41J256M4的Datasheet PDF文件第169页浏览型号MT41J256M4的Datasheet PDF文件第170页浏览型号MT41J256M4的Datasheet PDF文件第171页浏览型号MT41J256M4的Datasheet PDF文件第173页浏览型号MT41J256M4的Datasheet PDF文件第174页浏览型号MT41J256M4的Datasheet PDF文件第175页浏览型号MT41J256M4的Datasheet PDF文件第176页  
1Gb: x4, x8, x16 DDR3 SDRAM  
WRITE Operation  
Figure 85: WRITE Burst  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
CK#  
CK  
1
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
WL = AL + CWL  
Bank,  
Col n  
2
Address  
tDQSS t  
tDSH  
tDSH tWPST  
tWPRE  
DSH  
tDSH  
tDQSS (MIN)  
DQS, DQS#  
tDQSL  
tDQSH  
tDQSH  
tDQSL tDQSH  
tDQSL tDQSH tDQSL tDQSH tDQSL  
3
DI  
n
DI  
DI  
n + 2  
DI  
DI  
DI  
DI  
DI  
DQ  
n + 1  
n + 3  
n + 4  
n + 5  
n + 6  
n + 7  
tWPRE  
tDSH  
tDSH  
tDSH  
tDSH  
tWPST  
tDQSS (NOM)  
DQS, DQS#  
tDQSL  
tDSS  
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH  
tDSS tDSS tDSS tDSS  
3
DI  
n
DI  
n + 1  
DI  
DI  
DI  
DI  
DI  
DI  
n + 7  
DQ  
n + 2  
n + 3  
n + 4  
n + 5  
n + 6  
tDQSS  
tWPRE  
tWPST  
tDQSS (MAX)  
DQS, DQS#  
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH  
tDQSL  
DSS  
t
t
t
t
t
DSS  
DSS  
DSS  
DSS  
3
DI  
n
DI  
DI  
DI  
DI  
DI  
DI  
DI  
DQ  
n + 1  
n + 2  
n + 3  
n + 4  
n + 5  
n + 6  
n + 7  
Transitioning Data  
Don’t Care  
1. NOP commands are shown for ease of illustration; other commands may be valid at  
these times.  
Notes:  
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during  
the WRITE command at T0.  
3. DI n = data-in for column n.  
4. BL8, WL = 5 (AL = 0, CWL = 5).  
5. tDQSS must be met at each rising clock edge.  
6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST ac-  
tually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
172  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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