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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Commands – Truth Tables  
Commands – Truth Tables  
Table 70: Truth Table – Command  
Notes 1–5 apply to the entire table  
CKE  
Prev. Next  
Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10  
BA  
A[11,  
9:0] Notes  
Function  
MODE REGISTER SET  
REFRESH  
MRS  
REF  
SRE  
SRX  
H
H
H
L
H
H
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
H
H
V
H
L
BA  
V
OP code  
V
V
V
V
V
V
V
V
Self refresh entry  
Self refresh exit  
L
L
V
V
V
V
V
6
H
V
H
L
V
H
H
H
H
L
V
6, 7  
Single-bank PRECHARGE  
PRECHARGE all banks  
Bank ACTIVATE  
PRE  
PREA  
ACT  
WR  
H
H
H
H
H
H
H
H
BA  
V
V
V
V
L
V
V
L
L
H
L
H
L
BA  
Row address (RA)  
WRITE  
BL8MRS,  
BC4MRS  
H
BA RFU  
V
L
CA  
8
BC4OTF  
BL8OTF  
WRS4  
WRS8  
WRAP  
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
L
L
L
BA RFU  
BA RFU  
BA RFU  
L
H
V
L
L
CA  
CA  
CA  
8
8
8
WRITE  
BL8MRS,  
BC4MRS  
H
with auto  
precharge  
BC4OTF  
BL8OTF  
WRAPS4  
WRAPS8  
RD  
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
L
L
BA RFU  
BA RFU  
BA RFU  
L
H
V
H
H
L
CA  
CA  
CA  
8
8
8
READ  
BL8MRS,  
BC4MRS  
H
BC4OTF  
BL8OTF  
RDS4  
RDS8  
RDAP  
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
BA RFU  
BA RFU  
BA RFU  
L
H
V
L
L
CA  
CA  
CA  
8
8
8
READ  
BL8MRS,  
BC4MRS  
H
with auto  
precharge  
BC4OTF  
BL8OTF  
RDAPS4  
RDAPS8  
NOP  
H
H
H
H
H
H
H
H
H
L
L
L
H
H
H
X
H
V
H
V
H
H
L
H
H
H
X
H
V
H
V
L
BA RFU  
BA RFU  
L
H
V
X
V
H
H
V
X
V
CA  
CA  
V
8
8
L
NO OPERATION  
H
X
H
V
H
V
H
H
V
X
V
V
X
V
9
Device DESELECTED  
Power-down entry  
DES  
H
L
X
10  
6
PDE  
V
H
L
Power-down exit  
PDX  
L
H
V
V
V
V
V
6, 11  
12  
H
L
ZQ CALIBRATION LONG  
ZQ CALIBRATION SHORT  
ZQCL  
ZQCS  
H
H
H
H
X
X
X
X
X
X
H
L
X
X
L
L
1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising  
edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configuration-  
dependent.  
Notes:  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
116  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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