2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 4
Automated Word Programming
Flowchart
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
PROGRAM
SETUP
Data = 40h or 10h
Addr = Address of word to be
programmed
Start
WRITE
WRITE
DATA
Data = Word to be
programmed
Issue PROGRAM SETUP
Command and
Addr = Address of word to be
programmed
Word Address
READ
Status register data
Toggle OE# or CE# to
update status register.
Issue Word Address
and Word Data
Standby
Check SR7
1 = Ready, 0 = Busy
PROGRAM
SUSPEND Loop
Read Status Register
Bits
Repeat for subsequent words.
Write FFh after the last word programming operation
to reset the device to read array mode.
NO
NO
PROGRAM
SUSPEND?
SR7 = 1?
YES
YES
Full Status Register
1
Check (optional)
Word Program
Completed
BUS
FULL STATUS REGISTER CHECK FLOW
OPERATION COMMAND COMMENTS
Read Status Register
Bits
Standby
Standby
Standby
Check SR1
1 = Detect locked block
2
Check SR3
1 = Detect VPP LOW
NO
PROGRAM Attempted
on a Locked Block
SR1 = 0?
YES
3
Check SR4
1 = Word program error
NO
NO
V
PP Range Error
SR3 = 0?
YES
Word Program Failed
SR4 = 0?
YES
Word Program Passed
NOTE: 1. Full status register check can be done after each word or after a sequence of words.
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation
attempts.
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
16
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