256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; VDD = +3.3V 0.3V
BYTE
DESCRIPTION
Module rank density
Command and address setup time, tAS, tCMS
Command and address hold time, tAH, tCMH
Data signal input setup time, tDS
ENTRY (VERSION) MT16LSDF3264H
MT16LSDF6464H
31
32
128MB or 256MB
20
40
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
33
34
35
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
Data signal input hold time, tDH
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
36–40
41
00
00
Reserved
Device MIN ACTIVE/AUTO-REFRESH time, tRC
66ns (-13E)
71ns (-133)
66ns (-10E)
3C
42
46
3C
42
46
42–61
62
00
02
00
02
Reserved
REV. 2.0
SPD revision
63
(-13E)
(-133)
(-10E)
95
E1
2D
B8
04
50
Checksum for bytes 0-62
64
65–71
72
MICRON
2C
FF
2C
FF
Manufacturer’s JEDEC ID code
Manufacturer’s JEDEC ID code (continued)
Manufacturing location
1–12
01–0C
01– 0C
73–90
91
Variable Data
01–09
Variable Data
01–09
Module part number (ASCII)
PCB identification code
1–9
0
92
00
00
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
93
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
94
95-98
99–125
126
Manufacturer-specific data (RSVD)
System frequency
100 MHz/133 MHz
(-13E/-133/-10E)
64
CF
64
CF
127
SDRAM component and clock detail
NOTE:
1. The value of tRAS used for the -13E module is calculated from tRC - tRP. Actual device spec value is 37ns.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
21
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