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MT16LSDF3264LHG-133 参数 Datasheet PDF下载

MT16LSDF3264LHG-133图片预览
型号: MT16LSDF3264LHG-133
PDF下载: 下载PDF文件 查看货源
内容描述: [SMALL-OUTLINE SDRAM MODULE]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 22 页 / 476 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB (x64, DR)  
144-PIN SDRAM SODIMM  
Notes  
t
1. All voltages referenced to VSS.  
2. This parameter is sampled. VDD, VDDQ = +3.3V; f =  
16. Timing actually specified by WR.  
17. Required clocks are specified by JEDEC function-  
ality and are not dependent on any timing param-  
eter.  
18. The IDD current will increase or decrease propor-  
tionally according to the amount of frequency  
alteration for the test condition.  
19. Address transitions average one transition every  
two clocks.  
20. CLK must be toggled a minimum of two times  
during this period.  
1 MHz, T = 25°C; pin under test biased at 1.4V.  
A
3. IDD is dependent on output loading and cycle  
rates. Specified values are obtained with mini-  
mum cycle time and the outputs open.  
4. Enables on-chip refresh and address counters.  
5. The minimum specifications are used only to  
indicate cycle time at which proper operation  
over the full temperature range is ensured (0°C ≤  
T
+70°C).  
A
t
t
6. An initial pause of 100µs is required after power-  
up, followed by two AUTO REFRESH commands,  
before proper device operation is ensured. (VDD  
and VDDQ must be powered up simultaneously.  
VSS and VSSQ must be at same potential.) The two  
AUTO REFRESH-command wake-ups should be  
21. Based on CK = 10ns for -10E, and CK = 7.5ns for -  
133 and -13E.  
22. VIH overshoot: VIH (MAX) = VDDQ + 2V for a pulse  
width 3ns, and the pulse width cannot be greater  
than one third of the cycle rate. VIL undershoot:  
VIL (MIN) = -2V for a pulse width 3ns.  
23. The clock frequency must remain constant (stable  
clock is defined as a signal cycling within timing  
constraints specified for the clock pin) during  
access or precharge states (READ, WRITE, includ-  
t
repeated any time the REF refresh requirement is  
exceeded.  
t
7. AC characteristics assume T = 1ns.  
8. In addition to meeting the transition rate specifi-  
cation, the clock and CKE must transit between  
VIH and VIL (or between VIL and VIH) in a mono-  
tonic manner.  
t
ing WR, and PRECHARGE commands). CKE may  
be used to reduce the data rate.  
24. Auto precharge mode only. The precharge time  
t
9. Outputs measured at 1.5V with equivalent load:  
( RP) begins at 7ns for -13E; 7.5ns for -133 and 7ns  
for -10E after the first clock delay, after the last  
WRITE is executed. May not exceed limit set for  
precharge mode.  
Q
50pF  
25. Precharge mode only.  
t
26. JEDEC and PC100 specify three clocks.  
10. HZ defines the time at which the output achieves  
t
the open circuit condition; it is not a reference to  
VOH or VOL. The last valid data element will meet  
27. AC for -133/-13E at CL = 3 with no load is 4.6ns  
and is guaranteed by design.  
28. Parameter guaranteed by design.  
t
OH before going High-Z.  
t
11. AC timing and IDD tests have VIL = 0V and VIH = 3V,  
with timing referenced to 1.5V crossover point. If  
the input transition time is longer than 1ns, then  
the timing is referenced at VIL (MAX) and VIH  
(MIN) and no longer at the 1.5V crossover point.  
12. Other input signals can change no more than  
once every two clocks and are otherwise at valid  
VIH or VIL levels.  
29. For -10E, CL = 2 and CK = 10ns; for -133, CL = 3  
t
t
and CK = 7.5ns; for -13E, CL = 2 and CK = 7.5ns.  
30. CKE is HIGH during refresh command period  
t
RFC (MIN), else CKE is LOW. The IDD6 limit is  
actually a nominal value and does not result in a  
fail value.  
31. Refer to device data sheet for timing waveforms.  
t
32. The value of RAS used in -13E speed grade mod-  
13. IDD specifications are tested after the device is  
properly initialized.  
t
t
ule SPDs is calculated from RC - RP = 45ns.  
33. Leakage number reflects the worst case leakage  
possible through the module pin, not what each  
memory device contributes.  
t
14. Timing actually specified by CKS; clock(s) speci-  
fied as a reference only at minimum cycle rate.  
t
t
15. Timing actually specified by WR plus RP; clock(s)  
specified as a reference only at minimum cycle  
rate.  
pdf: 09005aef807924d2, source: 09005aef807924f1  
SDF16C32_64x64HG.fm - Rev. E 4/06 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2006 Micron Technology, Inc. All rights reserved.  
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