128Mb 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 22: WE#-Controlled Program AC Timing (16-Bit Mode)
3rd cycle 4th cycle
Data polling
PA
READ cycle
tWC
tWC
555h
tAS
PA
A[22:0]
CE#
tAH
tCH
tE
tCS
tGHWL
tOE
OE#
tWP
tDS
tWPH
WE#
tDF
tOH
tWHWH1
DQ[14:0]
DQ[15]-A1
AOh
tDH
PD
DQ7# DOUT
DOUT
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (DOUT) programmed by the previous PROGRAM
command.
Notes:
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
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