128Mb 3V Embedded Parallel NOR Flash
Write AC Characteristics
Write AC Characteristics
Table 29: WE#-Controlled Write AC Characteristics
80ns
VCCQ = 1.65V
to VCC
60ns 1
VCCQ = VCC
70ns
VCCQ = VCC
Parameter
Symbol
Unit
Notes
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Address valid to next address
valid
tWC
tAVAV
65
–
70
–
80
–
ns
CE# LOW to WE# LOW
tCS
tWP
tDS
tDH
tCH
tWPH
tAS
tAH
tELWL
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
0
35
45
0
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
WE# LOW to WE# HIGH
Input valid to WE# HIGH
WE# HIGH to input transition
WE# HIGH to CE# HIGH
WE# HIGH to WE# LOW
Address valid to WE# LOW
2
0
0
0
30
0
30
0
30
0
WE# LOW to address transi-
tion
45
45
45
OE# HIGH to WE# LOW
WE# HIGH to OE# LOW
–
tGHWL
tWHGL
tWHRL
0
0
–
–
–
0
0
–
–
–
0
0
–
–
–
ns
ns
ns
tOEH
tBUSY
Program/erase valid to
RY/BY# LOW
30
30
30
2
VCC HIGH to CE# LOW
Notes:
tVCS
tVCHEL
50
–
50
–
50
–
µs
1. Only available upon customer request.
2. Sampled only; not 100% tested.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
63
© 2012 Micron Technology, Inc. All rights reserved.