128Mb 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 24: CE#-Controlled Program AC Timing (16-Bit Mode)
3rd cycle 4th cycle
Data polling
PA
t
WC
555h
PA
A[22:0]
WE#
t
t
AS
AH
t
WH
t
WS
t
GHEL
OE#
CE#
t
t
t
CP
CPH
t
WHWH1
DS
DQ[14:0]/A-1
AOh
PD
DQ7#
D
OUT
t
DH
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit.
Notes:
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
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