128Mb 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 21: WE#-Controlled Program AC Timing (8-Bit Mode)
3rd cycle 4th cycle
Data polling
PA
READ cycle
tWC
tWC
AAAh
tAS
PA
A[22:0]/A-1
CE#
tAH
tCH
tE
tCS
tGHWL
tOE
OE#
tWP
tWPH
WE#
tDF
tOH
tWHWH1
tDS
DQ[7:0]
Notes:
AOh
tDH
PD
DQ7#
D
D
OUT
OUT
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (DOUT) programmed by the previous PROGRAM
command.
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
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