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M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Erase Operations  
Both READ and PROGRAM operations behave normally on these blocks. Reading from  
blocks that are suspended will output the status register. If any attempt is made to pro-  
gram in a protected block or in the suspended block, the PROGRAM command is ignor-  
ed, and the data remains unchanged. In this case, the status register is not read, and no  
error condition is given.  
It is also possible to issue the AUTO SELECT command after entering auto select mode.  
The READ/RESET command must be issued to return the device to read array mode be-  
fore the ERASE RESUME command will be accepted.  
During an ERASE SUSPEND operation and after the ENTER EXTENDED MEMORY  
BLOCK command is issued, a bus READ operation to the extended memory block will  
output the extended memory block data. After the device enters extended memory  
block mode, the EXIT EXTENDED MEMORY BLOCK command must be issued before  
the ERASE operation can be resumed.  
An ERASE SUSPEND command is ignored if it is written during a CHIP ERASE opera-  
tion.  
If the ERASE SUSPEND operation is aborted by performing a device reset or power-  
down, data integrity cannot be ensured, and it is recommended that the suspended  
blocks be erased again.  
ERASE RESUME Command  
The ERASE RESUME (30h) command restarts the program/erase controller after an  
ERASE SUSPEND operation.  
The device must be in read array mode before the ERASE RESUME command will be  
accepted. An erase can be suspended and resumed more than once.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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