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M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Program Operations  
1. The ENHANCED BUFFERED PROGRAM ABORT RESET command must be issued to return  
the device to read mode.  
Notes:  
2. When the block address is specified, all addresses in the selected block address space  
must be issued starting from 00h. Furthermore, when loading the write buffer address  
with data, data program addresses must be consecutive.  
3. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.  
4. If this flowchart location is reached because DQ5 = 1, then the ENHANCED BUFFERED  
PROGRAM command failed. If this flowchart location is reached because DQ1 = 1, then  
the ENHANCED BUFFERED PROGRAM command aborted. In both cases, the appropriate  
reset command must be issued to return the device to read mode: A RESET command if  
the operation failed; an ENHANCED BUFFERED PROGRAM ABORT RESET command if the  
operation aborted.  
EXIT ENHANCED BUFFERED PROGRAM Command  
The EXIT ENHANCED BUFFERED PROGRAM command requires two bus write cycles  
and is used to return the device to read mode. Until this command is issued, only the  
ENHANCED BUFFERED PROGRAM command can be issued, and all other commands  
are ignored.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
41  
© 2012 Micron Technology, Inc. All rights reserved.  
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