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M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Protection Operations  
1μs delay between successive UNLOCK PASSWORD commands in order to prevent un-  
authorized intruders from retrieving the password by trying all possible 64-bit combi-  
nations. If this delay does not occur, the latest command will be ignored. Approximately  
1μs is required for unlocking the device after the valid 64-bit password has been provi-  
ded.  
NONVOLATILE PROTECTION Commands  
After the ENTER NONVOLATILE PROTECTION COMMAND SET (C0h) command has  
been issued, the commands related to nonvolatile protection mode can be issued to the  
device. This command requires three bus write cycles.  
A block can be protected from program or erase by issuing a PROGRAM NONVOLATILE  
PROTECTION BIT (A0h) command, along with the block address. This command sets  
the nonvolatile protection bit to 0 for a given block. This command must be used ac-  
cording to all program command timings. Command results can be verified by checking  
the status register.  
The status of a nonvolatile protection bit for a given block or group of blocks can be  
read by issuing a READ NONVOLATILE MODIFY PROTECTION BIT command, along  
with the block address.  
The nonvolatile protection bits are erased simultaneously by issuing a CLEAR ALL  
NONVOLATILE PROTECTION BITS (80/30h) command. No specific block address is re-  
quired. If the nonvolatile protection bit lock bit is set to 0, the command fails.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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