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M25PX16SOVZM6TP 参数 Datasheet PDF下载

M25PX16SOVZM6TP图片预览
型号: M25PX16SOVZM6TP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,双I / O , 4 KB的界别分组擦除,串行闪存与75 MHz的SPI总线接口 [16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 65 页 / 1418 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Maximum rating  
M25PX16  
9
Maximum rating  
Stressing the device outside the ratings listed in Table 12: Absolute maximum ratings may  
cause permanent damage to the device. These are stress ratings only, and operation of the  
device at these, or any other conditions outside those indicated in the operating sections of  
this specification, is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability. Refer also to the Numonyx SURE program  
and other relevant quality documents.  
Table 12. Absolute maximum ratings  
Symbol  
Parameter  
Min  
Max  
Unit  
TSTG  
TLEAD  
VIO  
Storage temperature  
–65  
150  
see(1)  
VCC+0.6  
4.0  
°C  
°C  
V
Lead temperature during soldering  
Input and output voltage (with respect to ground)  
Supply voltage  
–0.6  
–0.6  
VCC  
V
VPP  
Fast Program/Erase voltage(2)  
–0.2  
10.0  
V
VESD  
Electrostatic discharge voltage (Human Body model)(3)  
–2000  
2000  
V
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), and the European  
directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.  
2. Avoid applying VPPH to the W/VPP pin during Bulk Erase.  
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).  
Table 13. Data Retention  
Parameter  
Condition  
Grade 3, Autograde 6, Grade 6 100000  
at 55°C 20  
Min  
Max  
Unit  
Program/Erase Cycles  
Data Retention  
Cycles per Sector  
years  
48/65  
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