M25P20 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Threshold Specifi-
cations
Power-Up Timing and Write Inhibit Voltage Threshold Specifications
Table 8: Power-Up Timing and VWI Threshold
Symbol
tVSL
Parameter
VCC(min) to S# LOW
Min
10
Max
–
Unit
μs
tPUW
VWI
Time delay to write instruction
1.0
1.0
1.0
10
ms
V
Write Inhibit voltage (device grade 6)
Write Inhibit voltage (device grade 3)
2.1
2.1
VWI
V
1. Parameters are characterized only.
Note:
PDF: 09005aef8456656e
m25p20.pdf - Rev. A 2/13 EN
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