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M25P20-VMN6TPB 参数 Datasheet PDF下载

M25P20-VMN6TPB图片预览
型号: M25P20-VMN6TPB
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P20 3V的2Mb串行闪存的嵌入式存储器 [Micron M25P20 2Mb 3V Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 45 页 / 592 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M25P20 Serial Flash Embedded Memory  
RELEASE from Deep Power-Down  
RELEASE from Deep Power-Down  
Once the device has entered deep power-down mode, all commands are ignored except  
RELEASE from deep power-down. Executing either of these commands takes the device  
out of the deep power-down mode. Except while an ERASE, PROGRAM, or WRITE STA-  
TUS REGISTER cycle is in progress, the RELEASE from deep power-down command al-  
ways provides access to the 8-bit electronic signature of the device, and can be applied  
even if the deep power-down mode has not been entered.  
Each command is executed by first driving S LOW to select the device. The command  
code is followed by 3 dummy bytes, each bit being latched-in on DQ0 during the rising  
edge of C. Then, the 8-bit electronic signature, stored in the memory, is shifted out on  
DQ1, each bit being shifted out during the falling edge of C.  
S must be driven LOW the entire duration of the sequence for the electronic signature to  
be read. However, driving S# HIGH after the command code, but before the entire 8-bit  
electronic signature has been output for the first time, still ensures that the device is put  
into standby mode.  
The RELEASE from deep power-down command is terminated by driving S# HIGH after  
the electronic signature has been read at least once. Sending additional clock cycles on  
C, while S is driven LOW, causes the electronic signature to be output repeatedly.  
When S# is driven HIGH, the device is put in standby mode immediately unless it was  
previously in deep power-down mode. If previously in deep power-down mode, the de-  
vice transitions to standby mode with delay as follows:  
• When S# is driven HIGH before the electronic signature is read, transition to standby  
mode is delayed by tRES1, as shown in the RELEASE from deep power-down com-  
mand sequence. S# must remain HIGH for at least tRES1(MAX).  
• When S# is driven HIGH after the electronic signature is read, transition to standby  
mode is delayed by tRES2. S# must remain HIGH for at least tRES2(MAX), as specified  
in the AC Characteristics tables.  
Once in standby mode, the device waits to be selected so that it can receive, decode,  
and execute instructions. Any release from deep power-down command issued while an  
ERASE, PROGRAM, or WRITE cycle is in progress is rejected and has no effect on the  
cycle in progress.  
Figure 19: RELEASE from Deep Power-Down Sequence  
0
7
C
DQ0  
DQ1  
tRDP  
LSB  
Command  
High-Z  
MSB  
Deep Power-Down Mode  
Standby Mode  
Don’t Care  
PDF: 09005aef8456656e  
m25p20.pdf - Rev. A 2/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.