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M25P20-VMN6TPB 参数 Datasheet PDF下载

M25P20-VMN6TPB图片预览
型号: M25P20-VMN6TPB
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P20 3V的2Mb串行闪存的嵌入式存储器 [Micron M25P20 2Mb 3V Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 45 页 / 592 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M25P20 Serial Flash Embedded Memory  
Power-Up/Down and Supply Line Decoupling  
Power-Up/Down and Supply Line Decoupling  
At power-up and power-down, the device must not be selected; that is, chip select (S#)  
must follow the voltage applied on VCC until VCC reaches the correct value:  
• VCC, min at power-up, and then for a further delay of tVSL  
• VSS at power-down  
A safe configuration is provided in the SPI Modes section.  
To avoid data corruption and inadvertent write operations during power-up, a power-  
on-reset (POR) circuit is included. The logic inside the device is held reset while VCC is  
less than the POR threshold voltage, VWI – all operations are disabled, and the device  
does not respond to any instruction. Moreover, the device ignores the following instruc-  
tions until a time delay of tPUW has elapsed after the moment that VCC rises above the  
VWI threshold:  
• WRITE ENABLE  
• PAGE PROGRAM  
• SECTOR ERASE  
• BULK ERASE  
• WRITE STATUS REGISTER  
However, the correct operation of the device is not guaranteed if, by this time, VCC is still  
below VCC.min. No WRITE STATUS REGISTER, PROGRAM, or ERASE instruction should  
be sent until:  
t
• PUW after VCC has passed the VWI threshold  
t
• VSL after VCC has passed the VCC,min level  
If the time, tVSL, has elapsed, after VCC rises above VCC,min, the device can be selected  
for READ instructions even if the tPUW delay has not yet fully elapsed.  
PDF: 09005aef8456656e  
m25p20.pdf - Rev. A 2/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.