M25P20 Serial Flash Embedded Memory
DEEP POWER-DOWN
DEEP POWER-DOWN
Executing the DEEP POWER-DOWN command is the only way to put the device in the
lowest power consumption mode, the DEEP POWER-DOWN mode. The DEEP POWER-
DOWN command can also be used as a software protection mechanism while the de-
vice is not in active use because in the DEEP POWER-DOWN mode the device ignores
all WRITE, PROGRAM, and ERASE commands.
Driving chip select (S#) HIGH deselects the device, and puts it in the STANDBY POWER
mode if there is no internal cycle currently in progress. Once in STANDBY POWER
mode, the DEEP POWER-DOWN mode can be entered by executing the DEEP POWER-
DOWN command, subsequently reducing the standby current from ICC1 to ICC2
.
Once the device has entered the DEEP POWER-DOWN mode, all commands are ignor-
ed except the RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNA-
TURE (RES) commands. These commands release the device from this mode.
The RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNATURE (RES)
commands and the READ IDENTIFICATION (RDID) command also allow the Electronic
Signature of the device to be output on Serial Data Output (Q).
The DEEP POWER-DOWN mode stops automatically at power-down. The device always
powers up in STANDBY POWER mode.
The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire dura-
tion of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the DEEP POWER-DOWN command is not executed. As soon as S# is driven
HIGH, it requires a delay of tDP before the supply current is reduced to ICC2 and the
DEEP POWER-DOWN mode is entered.
Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cy-
cle is in progress is rejected without any effect on the cycle that is in progress.
Figure 18: DEEP POWER-DOWN Command Sequence
0
7
C
tDP
LSB
DQ0
Command
MSB
Standby Mode
Deep Power-Down Mode
Don’t Care
PDF: 09005aef8456656e
m25p20.pdf - Rev. A 2/13 EN
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