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JS28F640J3F75A 参数 Datasheet PDF下载

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型号: JS28F640J3F75A
PDF下载: 下载PDF文件 查看货源
内容描述: Numonyx®嵌入式闪存( J3 65 nm)的单细胞每比特( SBC ) [Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)]
分类和应用: 闪存
文件页数/大小: 66 页 / 2203 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)  
After all user-data is written into the write buffer, issue the confirm command. If a  
command other than the confirm command is issued to the device, a command  
sequence error occurs and the operation aborts.  
Note:  
After issuing the confirm command, write-buffer contents are programmed into the  
flash memory array. The Status Register indicates a busy status (SR.7 = 0) during  
array programming.Issuing the Read Array command to the device while it is actively  
programming or erasing causes subsequent reads from the device to output invalid  
data. Valid array data is output only after the program or erase operation has finished.  
Upon completion of array programming, the Status Register indicates ready (SR.7 = 1).  
A full Status Register check should be performed to check for any programming errors,  
then cleared by using the Clear Status Register command.  
Additional buffered programming operations can be initiated by issuing another setup  
command, and repeating the buffered programming bus-cycle sequence. However, any  
errors in the Status Register must first be cleared before another buffered  
programming operation can be initiated.  
9.4  
Block Erase Operations  
Erasing a block changes ‘zeros’ to ‘ones. To change ones to zeros, a program operation  
must be performed (See Section 9.3, “Programming Operations”). Erasing is performed  
on a block basis - an entire block is erased each time an erase command sequence is  
issued. Once a block is fully erased, all addressable locations within that block read as  
logical ones (FFFFh for x16 mode, FFh for x8 mode). Only one block-erase operation  
can occur at a time, and is not permitted during a program suspend.  
To perform a block-erase operation, issue the Block Erase command sequence at the  
desired block address. Table 23 shows the two-cycle Block Erase command sequence.  
Table 23: Block-Erase Command Bus-Cycles  
Setup Write Cycle  
Address Bus Data Bus  
Block Address 0020h  
Confirm Write Cycle  
Command  
Address Bus  
Data Bus  
00D0h  
Block Erase  
Block Address  
Note:  
A block-erase operation requires the addressed block to be unlocked, and a valid  
voltage applied to VPEN throughout the block-erase operation. Otherwise, the  
operation will abort, setting the appropriate Status Register error bit(s).  
The Erase Confirm command latches the address of the block to be erased. The  
addressed block is preconditioned (programmed to all zeros), erased, and then verified.  
The read mode of the device is automatically changed to Read Status Register mode,  
and remains in effect until another read-mode command is issued.  
During a block-erase operation, STS and the Status Register indicates a busy status  
(SR.7 = 0). Upon completion, STS and the Status Register indicates a ready status  
(SR.7 = 1). The Status Register should be checked for any errors, then cleared. If any  
errors did occur, subsequent erase commands to the device are ignored unless the  
Status Register is cleared.  
The only valid commands during a block erase operation are Read Array, Read Device  
Information, CFI Query, and Erase Suspend. After the block-erase operation has  
completed, any valid command can be issued.  
Datasheet  
38  
Jan 2011  
208032-03  
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