Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
7.2
Program, Erase, Block-Lock Specifications
Table 13: Configuration Performance
#
Symbol
Parameter
Typ
Max
Unit
Notes
W200
tPROG/W
Program Time
Single word
40
128
400
720
1.0
50
175
654
2000
3600
4.0
60
µs
µs
1,2,3,4,6
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,5,6
1,2,3,4,6
1,2,3,4,6
1,2,3,4,6
1,2,3,6
1,2,3,6
1,7
Aligned 16 Words BP Time (32 Bytes)
Aligned 128 Words BP Time (256 Bytes)
Aligned 256 Words BP Time
W250
tPROG
Buffer Program Time
µs
µs
W501
W650
W651
W600
W601
W602
W652
W702
tERS/AB
tlks
Block Erase Time
sec
µs
Set Lock-Bit Time
tlkc
Clear Block Lock-Bits Time
0.5
15
1
sec
µs
tSUSP/P
tSUSP/E
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
20
15
20
µs
tERS/SUSP Erase to Suspend
500
500
3.2
—
µs
tSTS
STS Pulse Width Low Time
blank check
—
ns
1
tBC/MB
Array Block
—
ms
—
Notes:
1.
Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
3.
4.
5.
6.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Excludes system-level overhead.
These values are valid when the buffer is full, and the start address is aligned.
Max values are measured at worst case temperature, data pattern and VCC corner within 100K cycles. But for W650, W651,
W600 and W601, the Max value are expressed at +25 °C or -40 °C.
W602 is the typical time between an initial block erase or erase resume command and then a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
7.
7.3
Reset Specifications
Figure 12: AC Waveform for Reset Operation
STS (R)
P1
P2
RP# (P)
P3
Vcc
Note: STS is shown in its default mode (RY/BY#).
Datasheet
28
Jan 2011
208032-03
MICRON [ MICRON TECHNOLOGY ]
