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JS28F640J3F75A 参数 Datasheet PDF下载

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型号: JS28F640J3F75A
PDF下载: 下载PDF文件 查看货源
内容描述: Numonyx®嵌入式闪存( J3 65 nm)的单细胞每比特( SBC ) [Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)]
分类和应用: 闪存
文件页数/大小: 66 页 / 2203 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)  
Table 14: Reset Specifications  
#
Symbol  
Parameter  
Min  
Max  
Unit  
Notes  
RP# is asserted during block erase,  
program or lock-bit configuration  
operation  
RP# Pulse Low Time  
(If RP# is tied to VCC, this  
specification is not  
applicable)  
25  
µs  
1
P1  
tPLPH  
RP# is asserted during read  
100  
100  
ns  
ns  
µs  
1
RP# High to Reset during Block Erase, Program, or Lock-Bit  
Configuration  
P2  
P3  
tPHRH  
1,2  
tVCCPH  
Vcc Power Valid to RP# de-assertion (high)  
60  
Notes:  
1.  
2.  
These specifications are valid for all product versions (packages and speeds).  
A reset time, tPHQV, is required from the latter of STS (in RY/BY# mode) or RP# going high until outputs are valid.  
7.4  
AC Test Conditions  
Figure 13: AC Input/Output Reference Waveform  
VCCQ  
Input VCCQ/2  
0.0  
Test Points  
VCCQ/2 Output  
Note: AC test inputs are driven at VCCQ for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at  
CCQ/2 V (50% of VCCQ). Input rise and fall times (10% to 90%) < 5 ns.  
V
Figure 14: Transient Equivalent Testing Load Circuit  
Device  
Under Test  
Out  
CL  
Note: CL Includes Jig Capacitance  
Table 15: Test Configuration  
Test Configuration  
CL (pF)  
VCCQ = VCCQMIN  
30  
Jan 2011  
208032-03  
Datasheet  
29  
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