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JS28F256P33BFE 参数 Datasheet PDF下载

JS28F256P33BFE图片预览
型号: JS28F256P33BFE
PDF下载: 下载PDF文件 查看货源
内容描述: NumonyxTM的StrataFlash嵌入式存储器 [NumonyxTM StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 90 页 / 1067 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P33-65nm  
5.0  
Bus Operations  
CE# low and RST# high enable device read operations. The device internally decodes  
upper address inputs to determine the accessed block. ADV# low opens the internal  
address latches. OE# low activates the outputs and gates selected data onto the I/O  
bus.  
In asynchronous mode, the address is latched when ADV# goes high or continuously  
flows through if ADV# is held low. In synchronous mode, the address is latched by the  
first of either the rising ADV# edge or the next valid CLK edge with ADV# low (WE#  
and RST# must be VIH; CE# must be VIL).  
Bus cycles to/from the P33-65nm device conform to standard microprocessor bus  
operations. Table 5, “Bus Operations Summary”summarizes the bus operations and the  
logic levels that must be applied to the device control signal inputs.  
Table 5:  
Bus Operations Summary  
Bus Operation  
RST#  
CLK  
ADV#  
CE#  
OE#  
WE#  
WAIT  
DQ[15:0] Notes  
Asynchronous  
Synchronous  
V
V
V
V
V
X
L
L
L
L
L
L
H
H
L
Output  
Output  
IH  
Deasserted  
Driven  
Read  
Write  
Running  
IH  
IH  
IH  
IH  
X
X
X
X
L
L
H
H
X
X
High-Z  
High-Z  
High-Z  
High-Z  
Input  
High-Z  
High-Z  
High-Z  
1
2
Output Disable  
Standby  
Reset  
X
X
X
L
H
X
X
H
X
2
V
2,3  
IL  
Notes:  
1.  
Refer to the Table 7, “Command Bus Cycles” on page 19 for valid DQ[15:0] during a write  
operation.  
2.  
3.  
X = Don’t Care (H or L).  
RST# must be at V ± 0.2 V to meet the maximum specified power-down current.  
SS  
5.1  
5.2  
Read  
To perform a read operation, RST# and WE# must be deasserted while CE# and OE#  
are asserted. CE# is the device-select control. When asserted, it enables the flash  
memory device. OE# is the data-output control. When asserted, the addressed flash  
memory data is driven onto the I/O bus.  
Write  
To perform a write operation, both CE# and WE# are asserted while RST# and OE# are  
deasserted. During a write operation, address and data are latched on the rising edge  
of WE# or CE#, whichever occurs first. Table 7, “Command Bus Cycles” on page 19  
shows the bus cycle sequence for each of the supported device commands, while  
Table 6, “Command Codes and Definitions” on page 17 describes each command. See  
Section 15.0, “AC Characteristics” on page 48 for signal-timing details.  
Note:  
Write operations with invalid VCC and/or VPP voltages can produce spurious results and  
should not be attempted.  
5.3  
Output Disable  
When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-  
impedance (High-Z) state, WAIT is also placed in High-Z.  
Datasheet  
15  
Aug 2009  
OrderNumber:320003-08  
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