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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Read Specifications  
Figure 34: Continuous Burst Read with Output Delay  
tAVCH  
tVLCH tCHAX  
tCHQV  
tCHQV  
tCHQV  
CLK  
tAVQV  
tAVVH  
tVHVL  
A
tVHAX  
ADV#  
tELCH  
tELVH  
tELQV  
CE#  
OE#  
tGLTX  
tCHTV  
tCHQV  
tCHTX  
tCHQX  
WAIT  
DQ  
tGLQV  
tGLQX  
tCHQX  
tCHQX  
tCHQX  
1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be  
configured to assert either during or one data cycle before valid data.  
Notes:  
2. At the end of a wordline; the delay incurred when a burst access crosses a 16-word  
boundary and the starting address is not 4-word boundary aligned.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
89  
© 2013 Micron Technology, Inc. All rights reserved.  
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