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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Write Specifications  
9. When doing a READ STATUS operation following any command that alters the status  
register, tWHGL is 20ns.  
10. Add 10ns if the WRITE operation results in an RCR or block lock status change, for the  
subsequent READ operation to reflect this change.  
11. These specs are required only when the device is in a synchronous mode and the clock is  
active during an address setup phase.  
12. This specification must be complied with customer’s writing timing. The result would be  
unpredictable if there is any violation to this timing specification.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.  
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