欢迎访问ic37.com |
会员登录 免费注册
发布采购

JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号JS28F256P30B的Datasheet PDF文件第84页浏览型号JS28F256P30B的Datasheet PDF文件第85页浏览型号JS28F256P30B的Datasheet PDF文件第86页浏览型号JS28F256P30B的Datasheet PDF文件第87页浏览型号JS28F256P30B的Datasheet PDF文件第89页浏览型号JS28F256P30B的Datasheet PDF文件第90页浏览型号JS28F256P30B的Datasheet PDF文件第91页浏览型号JS28F256P30B的Datasheet PDF文件第92页  
256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Read Specifications  
Figure 33: Synchronous Single-Word Array or Nonarray Read  
tAVCH  
tCHAX  
tAVQV  
CLK  
A
tAVVH  
tVHVL  
tELCH  
tVHAX  
tVLVH  
ADV#  
tELVH  
tEHQZ  
tELQV  
CE#  
OE#  
tGHQZ  
tGLQX  
tGLTX  
tCHTV  
tCHQV  
tGHTZ  
tCHTX  
WAIT  
tGLQV  
tCHQX  
DQ  
1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be  
configured to assert either during or one data cycle before valid data.  
Notes:  
2. In this example, an n-word burst is initiated to the flash memory array and is terminated  
by CE# deassertion after the first word in the burst.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
88  
© 2013 Micron Technology, Inc. All rights reserved.  
 复制成功!