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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号JS28F256P30B的Datasheet PDF文件第77页浏览型号JS28F256P30B的Datasheet PDF文件第78页浏览型号JS28F256P30B的Datasheet PDF文件第79页浏览型号JS28F256P30B的Datasheet PDF文件第80页浏览型号JS28F256P30B的Datasheet PDF文件第82页浏览型号JS28F256P30B的Datasheet PDF文件第83页浏览型号JS28F256P30B的Datasheet PDF文件第84页浏览型号JS28F256P30B的Datasheet PDF文件第85页  
256Mb and 512Mb (256Mb/256Mb), P30-65nm  
DC Electrical Specifications  
Table 40: DC Current Characteristics (Continued)  
CMOS Inputs  
(VCCQ = 1.7–  
3.6V)  
TTL Inputs  
(VCCQ = 2.4–  
3.6V)  
Parameter  
Symbol Typ  
Max  
0.1  
Typ  
0.05  
0.05  
Max Unit Test Conditions  
Notes  
VPP blank check  
IPPBC  
0.05  
0.05  
0.1  
0.1  
mA VPP = VPPL  
VPP = VPPH  
3
0.1  
1. All currents are RMS unless noted. Typical values at TYP VCC, TC = +25°C.  
Notes:  
2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-  
ted.  
3. Sampled, not 100% tested.  
4. ICCES is specified with the device deselected. If device is read while in erase suspend, cur-  
rent is ICCES plus ICCR  
.
5. ICCW, ICCE measured over TYP or MAX times specified in Program and Erase Characteris-  
tics (page 97).  
6. if VIN > VCC, the input load current increases to 10µA MAX.  
7. the IPPS, PPWS, PPES  
I
I
will increase to 200µA when VPP/WP# is at VPPH  
.
Table 41: DC Voltage Characteristics  
CMOS Inputs  
TTL Inputs1  
(VCCQ = 1.7–3.6V)  
(VCCQ = 2.4–3.6V)  
Parameter  
Symbol  
VIL  
Min  
Max  
Min  
–0.5  
2
Max  
0.6  
Unit Test Conditions  
Notes  
Input low voltage  
Input high voltage  
Output low voltage  
–0.5  
0.4  
V
V
2
VIH  
VCCQ - 0.4 VCCQ + 0.5  
VCCQ + 0.5  
0.2  
VOL  
0.2  
V
VCC = VCC (MIN)  
VCCQ = VCCQ (MIN)  
IOL = 100µA  
Output high voltage  
VOH  
VCCQ - 0.2  
VCCQ – 0.2  
V
VCC = VCC (MIN)  
VCCQ = VCCQ (MIN)  
IOH = –100µA  
VPP lock out voltage  
VCC lock voltage  
VPPLK  
VLKO  
0.4  
0.4  
V
V
V
3
1.5  
0.9  
1.5  
0.9  
VCCQ lock voltage  
VLKOQ  
1. Synchronous read mode is not supported with TTL inputs.  
Notes:  
2. VIL can undershoot to –1.0V for durations of 2ns or less and VIH can overshoot to VCCQ  
1.0V for durations of 2ns or less.  
+
3. VPP VPPLK inhibits ERASE and PROGRAM operations. Do not use VPPL and VPPH outside  
their valid ranges.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
81  
© 2013 Micron Technology, Inc. All rights reserved.