256Mb and 512Mb (256Mb/256Mb), P30-65nm
DC Electrical Specifications
DC Electrical Specifications
Table 40: DC Current Characteristics
CMOS Inputs
(VCCQ = 1.7–
3.6V)
Symbol Typ Max
TTL Inputs
(VCCQ = 2.4–
3.6V)
Parameter
Typ
Max Unit Test Conditions
Notes
Input load current
ILI
–
±1
–
±2
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
1, 6
Output DQ[15:0], WAIT
leakage
current
ILO
–
±1
–
±10
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
VCC standby,
Power-down
256Mb
512Mb
ICCS
ICCD
,
65
210
420
65
210
420
µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
CE# = VCCQ
1. 2
130
130
RST# = VCCQ (for ICCS
)
RST# = VSS (for ICCD
WP# = VIH
)
Average Asynchronous sin-
VCC read gle-word f = 5 MHz
current (1 CLK)
ICCR
26
12
19
16
31
16
22
18
26
12
19
16
31
16
22
18
mA 16-word read VCC = VCC (MAX)
mA 16-word read
1
CE# = VIL
mA 8-word read
Page mode read
f = 13 MHz (17 CLK)
mA 16-word read
OE# = VIH
Synchronous burst
f = 52 MHz, LC = 4
21
35
35
24
50
50
21
35
35
24
50
50
mA Continuous
read
Inputs:
VIL or VIH
VCC program current,
VCC erase current
ICCW,
ICCE
mA VPP = VPPL
program/erase in progress
VPP = VPPH
,
1, 3, 5
1, 3, 5
1, 3, 4
,
program/erase in progress
VCC program sus-
pend current,
VCC erase suspend
current
256Mb
512Mb
ICCWS,
ICCES
65
70
210
225
65
70
210
225
µA CE# = VCCQ, suspend in pro-
gress
VPP standby current,
VPP program suspend current,
VPP erase suspend current
IPPS,
IPPWS,
IPPES
0.2
5
0.2
5
µA VPP = VPPL
,
1, 3, 7
suspend in progress
VPP read
IPPR
2
15
0.1
0.1
2
15
0.1
0.1
µA VPP = VPPL
1, 3
3
VPP program current
IPPW
0.05
0.05
0.05
0.05
mA VPP = VPPL, program in progress
VPP = VPPH, program in pro-
gress
VPP erase current
IPPE
0.05
0.05
0.1
0.1
0.05
0.05
0.1
0.1
mA VPP = VPPL, erase in progress
VPP = VPPH, erase in progress
3
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p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
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