256Mb and 512Mb (256Mb/256Mb), P30-65nm
Program and Erase Characteristics
Program and Erase Characteristics
Table 47: Program and Erase Specifications
VPPL
VPPH
Number
Symbol Parameter
Min
Typ Max Min
Typ Max Unit
Notes
Conventional Word Programming
W200
tPROG/W
Program Single word
Time
-
270
456
-
270
456
µs
µs
1
Buffered Programming
W250 tPROG
Program Aligned 32-Word, BP
-
-
-
-
-
310
310
716
900
-
-
-
-
-
310
310
716
900
1
Time
time (32 words)
Aligned 64-Wd, BP
time (64 words)
Aligned 128-Wd, BP
time (128 words)
375 1140
505 1690
900 3016
375 1140
505 1690
900 3016
Aligned 256-Wd, BP
time (256 words)
one full buffer, BP
time (512 words)
Buffered Enhanced Factory Programming
W451
W452
tBEFP/B
Program Single byte
BEFP Setup
n/a
n/a
n/a
n/a
n/a
n/a
-
0.5
-
-
-
µs
1, 2
1
tBEFP/Setup
5
Erase and Suspend
W500
W501
tERS/PB
tERS/MB
tSUSP/P
Erase
Time
32-KByte Parameter
128-KByte Main
-
-
-
-
-
0.8
0.8
25
4.0
4.0
30
30
-
-
-
-
-
-
0.8
0.8
25
4.0
4.0
30
30
-
s
1
W600
Suspend Program suspend
Latency
µs
W601
tSUSP/E
Erase suspend
25
25
W602
tERS/SUSP
Erase to Suspend
500
500
1, 3
Blank Check
W702
tBC/MB
blank
check
Main Array Block
-
3.2
-
-
3.2
-
ms
1. Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.
Notes:
2. Averaged over entire device.
3. W602 is the typical time between an initial block erase or erase resume command and
the a subsequent erase suspend command. Violating the specification repeatedly during
any particular block erase may cause erase failures.
PDF: 09005aef84566799
p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN
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