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JS28F256P30TFE 参数 Datasheet PDF下载

JS28F256P30TFE图片预览
型号: JS28F256P30TFE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB和512MB (256 / 256MB ) , P30-65nm [256Mb and 512Mb (256Mb/256Mb), P30-65nm]
分类和应用:
文件页数/大小: 95 页 / 1351 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Registers  
Table 18: Latency Count and Frequency Support  
Latency Count Settings  
5 (TSOP); 4 (Easy BGA)  
5 (Easy BGA)  
Frequency Support (MHz)  
40  
52  
Figure 14: Example Latency Count Setting Using Code 3  
t
Data  
0
1
2
3
4
CLK  
CE#  
ADV#  
Address  
A[MAX:1]  
Code 3  
High-Z  
D[15:0]  
Data  
R103  
End of Word Line (EOWL) Considerations  
End of Wordline (EOWL) WAIT states can result when the starting address of the burst  
operation is not aligned to a 16-word boundary; that is, A[3:0] of start address does not  
equal 0x0. The End of Wordline Timing Diagram illustrates the end of wordline WAIT  
state(s) that occur after the first 16-word boundary is reached. The number of data  
words and the number of WAIT states is summarized in the End of Wordline Data and  
WAIT State Comparison table for both P30-130nm and P30-65nm devices.  
PDF: 09005aef84566799  
p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
46  
© 2013 Micron Technology, Inc. All rights reserved.