PIC16F/LF1946/47
29.5 Memory Programming Requirements
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +125°C
DC CHARACTERISTICS
Param
Sym.
No.
Characteristic
Program Memory
Min.
Typ†
Max.
Units
Conditions
Programming Specifications
D110
D111
VIHH
IDDP
Voltage on MCLR/VPP/RE3 pin
8.0
—
—
—
9.0
10
V
(Note 3, Note 4)
Supply Current during
Programming
mA
D112
D113
VDD for Bulk Erase
2.7
—
—
VDD
max.
V
V
VPEW
VDD for Write or Row Erase
VDD
min.
VDD
max.
D114
D115
IPPPGM Current on MCLR/VPP during Erase/
Write
—
—
1.0
mA
mA
IDDPGM Current on VDD during Erase/Write
—
5.0
Data EEPROM Memory
D116
D117
ED
Byte Endurance
100K
—
—
—
E/W -40C to +85C
VDD
min.
VDD
max.
VDRW VDD for Read/Write
V
D118
D119
TDEW Erase/Write Cycle Time
TRETD Characteristic Retention
—
4.0
—
5.0
—
ms
20
Year -40°C to +55°C
Provided no other
specifications are violated
D120
TREF
Number of Total Erase/Write
Cycles before Refresh
1M
10M
—
—
E/W -40°C to +85°C
(2)
Program Flash Memory
Cell Endurance
D121
D122
EP
10K
—
—
E/W -40C to +85C (Note 1)
VDD
min.
VDD
max.
VPR
VDD for Read
V
D123
D124
TIW
Self-timed Write Cycle Time
—
2
2.5
—
ms
TRETD Characteristic Retention
40
—
Year Provided no other
specifications are violated
†
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Self-write and Block Erase.
2: Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
2010 Microchip Technology Inc.
Preliminary
DS41414A-page 393
MICROCHIP [ MICROCHIP ]
