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MCP4162T-502E/SN 参数 Datasheet PDF下载

MCP4162T-502E/SN图片预览
型号: MCP4162T-502E/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 7/8位单/双SPI数字电位器具有非易失性存储器 [7/8-Bit Single/Dual SPI Digital POT with Non-Volatile Memory]
分类和应用: 转换器电位器数字电位计存储电阻器光电二极管
文件页数/大小: 88 页 / 2259 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP414X/416X/424X/426X  
4.1.2  
BROWN-OUT RESET  
4.0  
FUNCTIONAL OVERVIEW  
When the device powers down, the device VDD will  
cross the VPOR/VBOR voltage.  
This Data Sheet covers a family of thirty-two Digital  
Potentiometer and Rheostat devices that will be  
referred to as MCP4XXX. The MCP4XX1 devices are  
the Potentiometer configuration, while the MCP4XX2  
devices are the Rheostat configuration.  
Once the VDD voltage decreases below the VPOR/VBOR  
voltage the following happens:  
• Serial Interface is disabled  
As the Device Block Diagram shows, there are four  
main functional blocks. These are:  
• EEPROM Writes are disabled  
If the VDD voltage decreases below the VRAM voltage  
the following happens:  
POR/BOR Operation  
Memory Map  
• Volatile wiper registers may become corrupted  
• TCON register may become corrupted  
Resistor Network  
Serial Interface (SPI)  
As the voltage recovers above the VPOR/VBOR voltage  
The POR/BOR operation and the Memory Map are  
discussed in this section and the Resistor Network and  
SPI operation are described in their own sections. The  
Device Commands commands are discussed in  
Section 7.0.  
see Section 4.1.1 “Power-on Reset”.  
Serial commands not completed due to a brown-out  
condition may cause the memory location (volatile and  
non-volatile) to become corrupted.  
4.2  
Memory Map  
4.1  
POR/BOR Operation  
The device memory is 16 locations that are 9-bits wide  
(16x9 bits). This memory space contains both volatile  
and non-volatile locations (see Table 4-1).  
The Power-on Reset is the case where the device is  
having power applied to it from VSS. The Brown-out  
Reset occurs when a device had power applied to it,  
and that power (voltage) drops below the specified  
range.  
TABLE 4-1:  
Address  
MEMORY MAP  
Function  
Memory Type  
The devices RAM retention voltage (VRAM) is lower  
than the POR/BOR voltage trip point (VPOR/VBOR). The  
maximum VPOR/VBOR voltage is less then 1.8V.  
00h  
01h  
02h  
03h  
04h  
05h  
06h  
07h  
08h  
09h  
0Ah  
0Bh  
0Ch  
0Dh  
0Eh  
0Fh  
Volatile Wiper 0  
Volatile Wiper 1  
RAM  
RAM  
When VPOR/VBOR < VDD < 2.7V, the electrical  
performance may not meet the data sheet  
specifications. In this region, the device is capable of  
reading and writing to its EEPROM and incrementing,  
decrementing, reading and writing to its volatile  
memory if the proper serial command is executed.  
Non-Volatile Wiper 0  
Non-Volatile Wiper 1  
Volatile TCON Register  
Status Register  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
Data EEPROM  
EEPROM  
EEPROM  
RAM  
RAM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
EEPROM  
4.1.1  
POWER-ON RESET  
When the device powers up, the device VDD will cross  
the VPOR/VBOR voltage. Once the VDD voltage crosses  
the VPOR/VBOR voltage the following happens:  
• Volatile wiper register is loaded with value in the  
corresponding non-volatile wiper register  
• The TCON register is loaded it’s default value  
• The device is capable of digital operation  
© 2008 Microchip Technology Inc.  
DS22059B-page 29  
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