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93C465AT-E/MC 参数 Datasheet PDF下载

93C465AT-E/MC图片预览
型号: 93C465AT-E/MC
PDF下载: 下载PDF文件 查看货源
内容描述: 1K - 16K与Microwire兼容串行EEPROM [1K-16K Microwire Compatible Serial EEPROMs]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 38 页 / 703 K
品牌: MICROCHIP [ MICROCHIP ]
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93XX46X/56X/66X/76X/86X  
The DO pin indicates the Ready/Busy status of the  
device, if CS is brought high after a minimum of 250 ns  
3.8  
WRITE  
The WRITEinstruction is followed by 8 bits (If ORG is  
low or A-version devices) or 16 bits (If ORG pin is high  
or B-version devices) of data which are written into the  
specified address. For 93AAXX and 93LCXX devices,  
after the last data bit is clocked into DI, the falling edge  
of CS initiates the self-timed auto-erase and program-  
ming cycle. For 93CXX devices, the self-timed auto-  
erase and programming cycle is initiated by the rising  
edge of CLK on the last data bit.  
low (TCSL). DO at logical ‘0’ indicates that programming  
is still in progress. DO at logical ‘1’ indicates that the  
register at the specified address has been written with  
the data specified and the device is ready for another  
instruction.  
Note:  
Note:  
For devices with PE functionality such as  
the 93XX76C or 93XX86C, the write  
sequence requires a logic high signal on  
the PE pin prior to the rising edge of clock  
on the last data bit.  
After the Write cycle is complete, issuing a  
Start bit and then taking CS low will clear  
the Ready/Busy status from DO.  
FIGURE 3-8:  
WRITE TIMING FOR 93AAXX AND 93LCXX DEVICES  
TCSL  
CS  
CLK  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
DI  
TSV  
TCZ  
High-Z  
DO  
Busy  
Ready  
High-Z  
Twc  
FIGURE 3-9:  
WRITE TIMING FOR 93CXX DEVICES  
TCSL  
CS  
CLK  
DI  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
TSV  
TCZ  
High-Z  
Busy  
Ready  
DO  
High-Z  
Twc  
© 2007 Microchip Technology Inc.  
DS21929D-page 15  
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