欢迎访问ic37.com |
会员登录 免费注册
发布采购

WS512K32-55G2UMA 参数 Datasheet PDF下载

WS512K32-55G2UMA图片预览
型号: WS512K32-55G2UMA
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 512KX32, 55ns, CMOS, CQFP68, 22.40 X 22.40 MM, 3.56 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 1213 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
 浏览型号WS512K32-55G2UMA的Datasheet PDF文件第3页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第4页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第5页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第6页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第7页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第8页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第9页浏览型号WS512K32-55G2UMA的Datasheet PDF文件第11页  
WS512K32-XXX  
Document Title  
512K x 32 SRAM Multi-Chip Package  
Revision History  
Rev # History  
Release Date Status  
Rev 0  
Initial  
October 1996  
Preliminary  
Rev 1  
Change (Pg. 1, 3)  
September 2002  
Advanced  
1.1 Change Operation Supply Current from 520mA To 540mA  
1.2 Change Data Retention Current from 12mA to 28mA.  
Change (Pg. 1, 2, 8, 10, 11)  
1.1 Delete G2 Package  
November 1997  
February 1998  
April 1998  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Change (Pg. 1, 9)  
1.1 Add SMD Case Outline M for G2T  
Change (Pg. 1, 3, 8)  
1.1 Remove Low Capacitance package option  
Change (Pg. 1, 6, 8)  
1.1 Add H1 package  
December 1998  
March 1999  
Change (Pg. 1, 4, 6, 9, 10)  
1.1 Remove H2 package  
1.2 Change logo to WEDC logo  
Rev 2  
Change (Pg. 1, 3, 4, 8)  
May 1999  
Final  
2.1 Change status from Preliminary to Final  
2.2 Make package descriptions consistent  
2.3 Add 15ns as available in Commercial and Industrial Temperatures only.  
Rev 4  
Rev 5  
Rev 6  
Change (Pg. 1, 3)  
4.1 Change Standby Current (Isb) from 60mA to 80mA Maximum  
June 1999  
Final  
Final  
Final  
Change (Pg. 1, 2, 3, 4, 7, 8)  
5.1 Add G1U package  
November 1999  
February 2000  
Change (Pg. 1, 8)  
6.1 Change G1U lead foot length from 0.64mm to 0.84mm Ref  
Rev 7  
Change (Pg. 1, 3, 9)  
October 2000  
Final  
7.1 Change Operating Supply Current from 540mA to 660mA Maximum  
7.2 Add Low Power Data Retention Current of 16mA to Data Retention Characteristics table  
7.3 Add Low Power Data Retention (L) option to Ordering Information  
Rev 8  
Rev 9  
Change (Pg. 1, 2, 6, 7, 9, 10)  
8.1 Change G2T and G4T package status to Not Recommended For New Design  
October 2001  
Final  
Final  
Change (Pg. 1, 2, 3, 8, 9, 10)  
9.1 Add G1T package  
November 2001  
9.2 Remove ‘Hi-Reliability Product’ Title  
Rev 10  
Change (Pg. 1, 2, 3, 4, 7, 8, 9, 10, 11)  
10.1 Remove G2T package  
August 2002  
Final  
10.2 Add G2U package  
10.3 Remove ‘Package to be Developed’ note for G4T  
Rev 11  
Rev 12  
Rev 13  
Change (Pg. 1,2,4,8,10,11,13)  
11.1 Change G1U package status to Not Recommended For New Designs  
February 2002  
May 2003  
Final  
Final  
Final  
Change (Pg. 1,2,3,7,8,10,11,13)  
12.1 Add G2L package  
Change (Pg. 1,2,3,7,8,10,11,13)  
December 2003  
13.1 Remove all reference to G1U package  
13.2 Remove all reference to G1T package  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2016 © 2016 Microsemi Corporation. All rights reserved.  
Rev. 22  
10  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
 复制成功!