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WS512K32-55G2UMA 参数 Datasheet PDF下载

WS512K32-55G2UMA图片预览
型号: WS512K32-55G2UMA
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 512KX32, 55ns, CMOS, CQFP68, 22.40 X 22.40 MM, 3.56 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 1213 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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WS512K32-XXX  
AC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
-15  
-17  
-20  
-25  
-35  
-45  
-55  
Parameter  
Read Cycle  
Symbol Min Max Min Max Min Max Min Max Min Max Min Max Min Max Units  
Read Cycle Time  
Address Access Time  
Output Hold from Address Change  
Chip Select Access Time  
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
tRC  
tAA  
15  
0
17  
0
20  
0
25  
0
35  
0
45  
0
55  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
15  
17  
20  
25  
35  
45  
55  
tOH  
tACS  
tOE  
15  
8
17  
9
20  
10  
25  
12  
35  
25  
45  
25  
55  
25  
1
tCLZ  
2
0
2
0
2
0
2
0
4
0
4
0
4
0
1
tOLZ  
tCHZ  
tOHZ  
1
12  
12  
12  
12  
12  
12  
12  
12  
15  
15  
20  
20  
20  
20  
1
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
-15  
-17  
-20  
-25  
-35  
-45  
-55  
Parameter  
Write Cycle  
Symbol  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
tAH  
Min  
15  
13  
13  
10  
13  
2
Max  
Min  
17  
15  
15  
11  
15  
2
Max  
Min  
20  
15  
15  
12  
15  
2
Max  
Min  
25  
17  
17  
13  
17  
2
Max  
Min  
35  
25  
25  
20  
25  
2
Max  
Min  
45  
35  
35  
25  
35  
2
Max  
Min  
55  
50  
50  
25  
40  
2
Max Units  
Write Cycle Time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
Address Setup Time  
Address Hold Time  
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
0
2
0
2
0
3
0
4
0
4
5
5
5
5
1
tOW  
1
tWHZ  
8
9
11  
13  
15  
20  
20  
ns  
ns  
tDH  
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
2. The Address Setup Time of minimum 2ns is for the G2U, G1U and H1 packages. tAS minimum for the G4T package is 0ns.  
FIGURE. 4 – AC TEST CIRCUIT  
AC Test Conditions  
Parameter  
Input Pulse Levels  
Input Rise and Fall  
Input and Output Reference Level  
Output Timing Reference Level  
Typ  
VIL = 0, VIH = 3.0  
Unit  
V
ns  
V
IOL  
Current Source  
5
1.5  
1.5  
V
D.U.T.  
Ceff = 50 pf  
VZ ≈ 1.5V  
(Bipolar Supply)  
Notes:  
V
I
Z is programmable from -2V to +7V.  
OL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 Ω.  
Z is typically the midpoint of VOH and VOL  
OL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
V
I
.
IOH  
Current Source  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2016 © 2016 Microsemi Corporation. All rights reserved.  
Rev. 22  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp