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WS512K32-55G2UMA 参数 Datasheet PDF下载

WS512K32-55G2UMA图片预览
型号: WS512K32-55G2UMA
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM Module, 512KX32, 55ns, CMOS, CQFP68, 22.40 X 22.40 MM, 3.56 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 1213 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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WS512K32-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
Max  
+125  
+150  
VCC+0.5  
150  
Unit  
°C  
°C  
V
CS  
H
L
OE  
X
WE  
X
Mode  
Standby  
Read  
Data I/O  
High Z  
Power  
Standby  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
-65  
L
H
Data Out  
High Z  
-0.5  
L
H
H
Out Disable  
Write  
Active  
TJ  
°C  
V
L
X
L
Data In  
Active  
VCC  
-0.5  
7.0  
CAPACITANCE  
RECOMMENDED OPERATING CONDITIONS  
Ta = +25°C  
Parameter  
Symbol  
VCC  
Min  
4.5  
Max  
5.5  
Unit  
V
Parameter  
Symbol  
COE  
Conditions  
Max Unit  
Supply Voltage  
OE# capacitance  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
50  
pF  
pF  
Input High Voltage  
Input Low Voltage  
Operating Temp (Mil)  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
WE1-4# capacitance  
HIP (PGA)  
CWE  
20  
50  
20  
20  
20  
50  
VIL  
-0.5  
-55  
V
CQFP G4T  
TA  
+125  
°C  
CQFP G2U/G2L  
CS1-4# capacitance  
Data I/O capacitance  
Address input capacitance  
CCS  
CI/O  
CAD  
VIN = 0 V, f = 1.0 MHz  
VI/O = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
pF  
pF  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
Parameter  
Symbol  
ILI  
ILO  
Conditions  
Min  
Max  
Units  
Input Leakage Current  
VCC = 5.5, VIN = GND to VCC  
10  
10  
μA  
μA  
mA  
mA  
Output Leakage Current  
Operating Supply Current x 32 Mode  
Standby Current  
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5  
ICC x 32  
ISB  
660  
80  
IOL = 6mA for 15 - 35ns,  
IOL = 2.1mA for 45 - 55ns, VCC = 4.5  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
V
V
IOH = -4.0mA for 15 - 35ns,  
IOH = -1.0mA for 45 - 55ns, VCC = 4.5  
2.4  
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
DATA RETENTION CHARACTERISTICS  
(Ta = -55°C to +125°C)  
Parameter  
Symbol  
Conditions  
Min  
Max  
Units  
Data Retention Supply Voltage  
Data Retention Current  
VDR  
CS VCC 0.2V  
VCC = 3V  
2.0  
5.5  
28  
16  
V
ICCDR1  
ICCDR2  
mA  
mA  
Low Power Data Retention Current (WS512K32L-XXX)  
VCC = 3V  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2016 © 2016 Microsemi Corporation. All rights reserved.  
Rev. 22  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp