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W3H32M64EA-400SBM 参数 Datasheet PDF下载

W3H32M64EA-400SBM图片预览
型号: W3H32M64EA-400SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 27 页 / 1197 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H32M64EA-XSBX  
ADVANCED  
FIGURE 11 – READ COMMAND  
READ COMMAND  
The READ command is used to initiate a burst read access to an  
active row. The value on the bank address inputs selects the bank,  
and the address provided on inputs A0–i (where i = A9) selects  
the starting column location. The value on input A10 determines  
whether or not auto precharge is used. If auto precharge is  
selected, the row being accessed will be precharged at the end  
of the READ burst; if auto precharge is not selected, the row will  
remain open for subsequent accesses.  
CK#  
CK  
CKE  
CS#  
READ OPERATION  
RAS#  
CAS#  
READ bursts are initiated with a READ command. The starting  
column and bank addresses are provided with the READ command  
and auto precharge is either enabled or disabled for that burst  
access. If auto precharge is enabled, the row being accessed is  
automatically precharged at the completion of the burst. If auto  
precharge is disabled, the row will be left open after the completion  
of the burst.  
WE#  
Col  
ADDRESS  
During READ bursts, the valid data-out element from the starting  
column address will be available READ latency (RL) clocks later.  
RL is dened as the sum of AL and CL; RL = AL + CL. The value  
forAL and CL are programmable via the MR and EMR commands,  
respectively. Each subsequent data-out element will be valid  
nominally at the next positive or negative clock edge (i.e., at the  
next crossing of CK and CK#).  
ENABLE  
A10  
AUTO PRECHARGE  
BANK ADDRESS  
DISABLE  
Bank  
DQS/DQS# is driven by the DDR2 SDRAM along with output data.  
The initial LOW state on DQS and HIGH state on DQS# is known  
as the read preamble (tRPRE). The LOW state on DQS and HIGH  
state on DQS# coincident with the last data-out element is known  
as the read postamble (tRPST).  
DON’T CARE  
Upon completion of a burst, assuming no other commands have  
been initiated, the DQ will go High-Z.  
Data from any READ burst may be concatenated with data from a  
subsequent READ command to provide a continuous ow of data.  
The rst data element from the new burst follows the last element  
of a completed burst. The new READ command should be issued x  
cycles after the rst READ command, where x equals BL/ 2 cycles.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev.1  
16  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
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