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MX26L3220XBI-12 参数 Datasheet PDF下载

MX26L3220XBI-12图片预览
型号: MX26L3220XBI-12
PDF下载: 下载PDF文件 查看货源
内容描述: 32M - BIT [2M ×16 ]的CMOS多重一次性可编程EPROM [32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM]
分类和应用: 闪存存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 38 页 / 1135 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX26L3220  
All data are latched on the rising edge of WE or CE,  
whichever happens later.  
AUTOMATIC PROGRAMMING  
The MX26L3220 is word programmable using the Auto-  
matic Programming algorithm. The Automatic Program-  
ming algorithm makes the external system do not need  
to have time out sequence nor to verify the data pro-  
grammed. The typical chip programming time at room  
temperature of the MX26L3220 is less than 90 seconds.  
MXIC's Flash technology combines years of EPROM  
experience to produce the highest levels of quality, relia-  
bility, and cost effectiveness. The MX26L3220 electri-  
cally erases all bits simultaneously using Fowler-Nord-  
heim tunneling. The bytes are programmed by using the  
EPROM programming mechanism of hot electron injec-  
tion.  
AUTOMATIC PROGRAMMING ALGORITHM  
MXIC's Automatic Programming algorithm require the user  
to only write program set-up commands (including 2 un-  
lock write cycle and A0H) and a program command (pro-  
gram data and address). The device automatically times  
the programming pulse width, provides the program veri-  
fication, and counts the number of sequences. A status  
bit similar to DATA polling and a status bit toggling be-  
tween consecutive read cycles, provide feedback to the  
user as to the status of the programming operation.  
During a program cycle, the state-machine will control  
the program sequences and command register will not  
respond to any command set. After the state machine  
has completed its task, it will allow the command regis-  
ter to respond to its full command set.  
AUTOMATIC CHIP ERASE  
The entire chip is bulk erased using 50 ms erase pulses  
according to MXIC's Automatic Chip Erase algorithm.  
Typical erasure at room temperature is accomplished in  
less than 45 seconds. The Automatic Erase algorithm  
automatically programs the entire array prior to electrical  
erase. The timing and verification of electrical erase are  
controlled internally within the device.  
AUTOMATIC ERASE ALGORITHM  
MXIC's Automatic Erase algorithm requires the user to  
write commands to the command register using stand-  
ard microprocessor write timings. The device will auto-  
matically pre-program and verify the entire array. Then  
the device automatically times the erase pulse width,  
provides the erase verification, and counts the number  
of sequences. A status bit toggling between consecu-  
tive read cycles provides feedback to the user as to the  
status of the programming operation.  
Register contents serve as inputs to an internal state-  
machine which controls the erase and programming cir-  
cuitry. During write cycles, the command register inter-  
nally latches address and data needed for the program-  
ming and erase operations. All address are latched on  
the falling edge of WE or CE, whichever happens later.  
P/N:PM0826  
REV. 0.5, JAN. 29, 2002  
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