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MX25L1635DMI-12G 参数 Datasheet PDF下载

MX25L1635DMI-12G图片预览
型号: MX25L1635DMI-12G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ ×1 / ×2 / ×4 ] CMOS串行闪存 [16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 50 页 / 728 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L1635D  
COMMAND DESCRIPTION  
Table 5. Command Set  
COMMAND W REN  
W RDI  
(write  
disable)  
RDID (read  
identification) status  
register)  
RDSR (read W RSR  
READ (read FAST  
2READ (2 4READ (4  
(byte)  
(write  
(write status data)  
register)  
READ (fast x I/O read x I/O read  
read data)  
enable)  
command) command)  
Note1  
1st byte  
2nd byte  
06 (hex) 04 (hex)  
9F (hex)  
05 (hex)  
01 (hex)  
Values  
03 (hex)  
0B (hex)  
AD1  
BB (hex)  
ADD(2)  
EB (hex)  
AD1(A23-  
A16)  
AD2 (A15- AD2  
A8)  
AD3 (A7-  
A0)  
ADD(4) &  
Dummy(4)  
Dummy(4)  
3rd byte  
4th byte  
ADD(2) &  
Dummy(2)  
AD3  
5th byte  
Action  
Dummy  
sets the resets the outputs  
to read out to write new n bytes  
JEDEC ID: 1- the values values to the read out  
byte of the  
manufacturer status  
n bytes  
n bytes  
n bytes  
(W EL)  
write  
(W EL)  
write  
read out  
until CS#  
goes high  
read out by read out by  
2 x I/O until 4 x I/O until  
CS# goes CS# goes  
status  
register  
until CS#  
goes high  
enable  
latch bit  
enable  
latch bit  
ID & 2-byte  
device ID  
register  
high  
high  
COMMAND 4PP (quad SE (sector BE (block CE (chip PP (Page CP  
DP (Deep RDP  
program) (Continuou power (Release  
from deep ID)  
RES (read Release  
(byte)  
page  
erase)  
erase)  
erase)  
electronic  
Read  
program)  
sly  
down)  
Enhanced  
program  
mode)  
power  
down)  
1st byte  
38 (hex)  
AD1  
20 (hex)  
D8 (hex) 60 or C7 02 (hex)  
(hex)  
AD (hex)  
B9 (hex)  
AB (hex)  
AB (hex)  
FFh (hex)  
2nd byte  
3rd byte  
4th byte  
Action  
AD1  
AD2  
AD3  
AD1  
AD2  
AD3  
AD1  
AD2  
AD3  
AD1  
AD2  
AD3  
x
x
x
x
x
x
quad input to erase  
to program the  
the selected selected  
to erase to erase to  
continously enters  
program  
whole chip, down mode power  
release  
to read out All these  
the  
whole  
program  
the  
selected  
page  
deep power from deep 1-byte  
device ID  
commands  
FFh,00h,AA  
h or 55h will  
escape the  
performance  
enhance  
selected chip  
block  
page  
sector  
the  
down mode  
address is  
automatical  
ly increase  
mode.  
COMMAND REMS (read REMS2  
REMS4  
(read ID for  
ENSO  
(enter  
EXSO (exit RDSCUR WRSCUR ESRY  
DSRY  
(disable  
SO to  
(byte)  
electronic  
(read ID for  
secured  
OTP)  
(read  
security  
(write  
security  
(enable  
SO to  
manufacturer 2x I/O mode) 4x I/O mode) secured  
& device ID)  
OTP)  
register) register)  
2B (hex) 2F (hex)  
output  
RY/BY#)  
output  
RY/BY#)  
1st byte  
2nd byte  
3rd byte  
4th byte  
Action  
90 (hex)  
EF (hex)  
DF (hex)  
B1 (hex) C1 (hex)  
70 (hex)  
80 (hex)  
x
x
x
x
x
x
ADD (Note 2) ADD (Note 2) ADD (Note 2)  
output the output the output the  
manufacturer manufacturer manufacturer the 512-bit 512-bit  
ID & device  
ID  
to enter  
to exit the to read  
to set the to enable to disable  
value of  
security  
lock-down SO to  
bit as "1" output  
SO to  
output  
RY/BY#  
ID & device ID & device secured  
ID  
secured  
ID  
OTP  
OTP mode register  
(once  
RY/BY#  
mode  
lock-down, during CP during CP  
cannot be mode  
updated)  
mode  
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SI/SIO1 which is different from  
1 x I/O condition.  
Note 2: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.  
Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden  
mode.  
P/N:PM1374  
REV. 1.5, OCT. 01, 2008  
14