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MX25L12835F-M2I-10G 参数 Datasheet PDF下载

MX25L12835F-M2I-10G图片预览
型号: MX25L12835F-M2I-10G
PDF下载: 下载PDF文件 查看货源
内容描述: [16M闪存FLASH]
分类和应用: 闪存
文件页数/大小: 102 页 / 3804 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L12835F  
11. POWER-ON STATE  
The device is at below states when power-up:  
- Standby mode (please note it is not deep power-down mode)  
- Write Enable Latch (WEL) bit is reset  
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct  
level:  
- VCC minimum at power-up stage and then after a delay of tVSL  
- GND at power-down  
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.  
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change  
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and  
the flash device has no response to any command.  
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not  
guaranteed. The read, write, erase, and program command should be sent after the below time delay:  
- tVSL after VCC reached VCC minimum level  
Please refer to the "Figure 85. Power-up Timing".  
Note:  
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommend-  
ed. (generally around 0.1uF)  
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response  
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in  
progress.  
P/N: PM1795  
REV. 1.0, OCT. 23, 2012  
85  
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