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MAX1636EAP 参数 Datasheet PDF下载

MAX1636EAP图片预览
型号: MAX1636EAP
PDF下载: 下载PDF文件 查看货源
内容描述: 低电压,高精度降压型控制器,用于便携式CPU电源 [Low-Voltage, Precision Step-Down Controller for Portable CPU Power]
分类和应用: 控制器便携式
文件页数/大小: 24 页 / 220 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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Lo w -Vo lt a g e , P re c is io n S t e p -Do w n  
Co n t ro lle r fo r P o rt a b le CP U P o w e r  
MAX136  
Table 6. Low-Voltage Troubleshooting Chart  
SYMPTOM  
CONDITION  
ROOT CAUSE  
SOLUTION  
Increase bulk output capacitance  
per formula (see Low-Voltage  
Operation section). Reduce inductor  
value.  
Sag or droop in V  
step-load change  
under  
Low V -V  
differential, <1.5V  
Limited inductor-current  
slew rate per cycle.  
OUT  
IN OUT  
Dropout voltage is too high  
(V follows V as V  
decreases)  
Reduce operation to 200kHz.  
Reduce MOSFET on-resistance and  
coil DCR.  
Low V -V  
differential, <1V  
Maximum duty-cycle limits  
exceeded.  
IN OUT  
OUT  
IN  
IN  
Unstablejitters between  
different duty factors and  
frequencies  
Low V -V  
differential, <0.5V  
Normal function of internal  
low-dropout circuitry.  
Increase the minimum input voltage  
or ignore.  
IN OUT  
VL linear regulator is going  
into dropout and isnt provid-  
ing good gate-drive levels.  
Use a small 20mA Schottky diode  
for boost diode. Supply VL from an  
external source.  
Poor efficiency  
Low input voltage, <5V  
Wont start under load or  
quits before battery is  
completely dead  
Supply VL from an external source  
other than V , such as the system  
IN  
+5V supply.  
VL output is so low that it  
hits the VL UVLO threshold.  
Low input voltage, <4.5V  
where R  
is the DC resistance of the coil, R  
is  
dissipated in the MOSFET body diode if no external  
Schottky diode is used.  
DC  
DS(ON)  
the MOSFET on-resistance, and R  
is the current-  
SENSE  
sense resistor value. The R  
term assumes identi-  
DS(ON)  
2
P(cap) = input capacitor ESR loss = I  
x R  
ESR  
RMS  
cal MOSFETs for the high-side and low-side switches  
because they time-share the inductor current. If the  
MOSFETs are not identical, their losses can be estimat-  
ed by averaging the losses according to duty factor.  
where I  
is the input ripple current as calculated in  
RMS  
the Input Capacitor Value section.  
Lig h t -Lo a d Effic ie n c y Co n s id e ra t io n s  
Under light loads, the PWM operates in discontinuous  
mode, where the inductor current discharges to zero at  
some point during the switching cycle. This makes the  
inductor currents AC component high compared to the  
PD(tran) = transition loss = V x I  
x f x 3/2 x  
IN  
LOAD  
[(V  
C
/ I  
) + 20ns]  
IN RSS GATE  
where C  
is the reverse transfer capacitance of the  
RSS  
high-side MOSFET (a data-sheet parameter), I  
the DH gate-driver peak output current (1.5A typ), and  
20ns is the rise/fall time of the DH driver (20ns typ).  
is  
GATE  
2
load current, which increases core losses and I R loss-  
es in the output filter capacitors. For best light-load effi-  
c ie nc y, us e MOSFETs with mod e ra te g a te -c ha rg e  
levels and use ferrite, MPP, or other low-loss core mate-  
ria l. Avoid p owd e re d -iron c ore s ; e ve n Kool-Mu  
(aluminum alloy) is not as good as ferrite.  
P(gate) = Q x f x VL  
g
where VL is the internal logic-supply voltage (+5V), and  
Q
is the sum of the gate-charge values for low-side  
g
and high-side switches. For matched MOSFETs, Q is  
twice the data-sheet value of an individual MOSFET. If  
P C Bo a rd La yo u t Co n s id e ra t io n s  
Good PC board layout is required in order to achieve  
specified noise, efficiency, and stable performance.  
The PC b oa rd la yout a rtis t mus t b e g ive n e xp lic it  
instructions, preferably a pencil sketch showing the  
placement of power-switching components and high-  
c urre nt routing . Se e the PC b oa rd la yout in the  
MAX1636 evaluation kit manual for examples. A ground  
plane is essential for optimum performance. In most  
applications, the circuit will be located on a multi-layer  
board, and full use of the four or more copper layers  
is recommended. Use the top layer for high-current  
g
V
OUT  
is set to less than 4.5V, replace VL in this equa-  
tion with V  
. In this c a s e , e ffic ie nc y c a n b e  
BATT  
improved by connecting VL to an efficient 5V source,  
such as the system +5V supply.  
P(diode) = diode conduction losses =  
I
x V  
x t x f  
LOAD  
FWD D  
where t is the diode-conduction time (120ns typ), and  
D
V
FWD  
is the forward voltage of the diode. This power is  
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