MV78100
Hardware Specifications
9.5.3
SDRAM DDR2 Interface DC Electrical Specifications
Table 29: SDRAM DDR2 Interface DC Electrical Specifications
Parameter
Input low level
Symbol Test Condition
Min
-0.3
Typ
Max
VREF - 0.125
VDDIO + 0.3
0.28
Units Notes
VIL
-
-
V
V
V
V
-
-
-
-
Input high level
Output low level
Output high level
VIH
VREF + 0.125
VOL IOL = 13.4 mA
VOH IOH = -13.4 mA
1.42
120
60
150
75
180
90
60
6
ohm 1 , 2
ohm 1 , 2
ohm 1 , 2
Rtt effective impedance value
RTT See note 2
40
50
Deviation of VM w ith respect to VDDQ/2 dVm See note 3
-6
%
uA
pF
3
4, 5
-
Input leakage current
Pin capacitance
IIL
0 < VIN < VDDIO
-
-10
10
Cpin
5
Notes:
1. See SDRAM functional description section for ODT configuration.
2. Measurement definition for RTT: Apply VREF +/- 0.25 to input pin separately,
then measure current I(VREF +0.25) and I(VREF - 0.25) respectively.
0.5
RTT =
I (VREF + 0.25 ) − I (VREF −0.25 )
3. Measurement definition for VM: Measured voltage (VM) at input pin (midpoint) w ith no load.
2 × Vm
VDDIO
⎛
⎜
⎞
⎠
dVM =
−1 ×100%
⎟
⎝
4. While I/O is in High-Z.
5. This current does not include the current flow ing through the pullup/pulldow n resistor.
MV-S104552-U0 Rev. D
Page 68
Copyright © 2008 Marvell
December 6, 2008, Preliminary
Document Classification: Proprietary Information
MARVELL [ MARVELL TECHNOLOGY GROUP LTD. ]
